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p-i-n junction quantum dot saturable absorber mirror: electrical control of ultrafast dynamics

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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p-i-n junction quantum dot saturable absorber mirror: electrical control of ultrafast dynamics. / Zolotovskaya, Svetlana; Butkus, M.; Haring, R. et al.
In: Optics Express, Vol. 20, No. 8, 2012, p. 9038-9045.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Zolotovskaya, S, Butkus, M, Haring, R, Able, A, Kaenders, W, Krestnikov, IL, Livshits, DA & Rafailov, EU 2012, 'p-i-n junction quantum dot saturable absorber mirror: electrical control of ultrafast dynamics', Optics Express, vol. 20, no. 8, pp. 9038-9045. https://doi.org/10.1364/OE.20.009038

APA

Zolotovskaya, S., Butkus, M., Haring, R., Able, A., Kaenders, W., Krestnikov, I. L., Livshits, D. A., & Rafailov, E. U. (2012). p-i-n junction quantum dot saturable absorber mirror: electrical control of ultrafast dynamics. Optics Express, 20(8), 9038-9045. https://doi.org/10.1364/OE.20.009038

Vancouver

Zolotovskaya S, Butkus M, Haring R, Able A, Kaenders W, Krestnikov IL et al. p-i-n junction quantum dot saturable absorber mirror: electrical control of ultrafast dynamics. Optics Express. 2012;20(8):9038-9045. doi: 10.1364/OE.20.009038

Author

Zolotovskaya, Svetlana ; Butkus, M. ; Haring, R. et al. / p-i-n junction quantum dot saturable absorber mirror: electrical control of ultrafast dynamics. In: Optics Express. 2012 ; Vol. 20, No. 8. pp. 9038-9045.

Bibtex

@article{81016878a330406d8be4efcb5190597a,
title = "p-i-n junction quantum dot saturable absorber mirror: electrical control of ultrafast dynamics",
abstract = "We report on nonlinear optical properties of a p-i-n junction quantum dot saturable absorber based on InGaAs/GaAs. Absorption recovery dynamics and nonlinear reflectivity are investigated for different reverse bias and pump power conditions. A decrease in absorption recovery time of nearly two orders of magnitude is demonstrated by applying a voltage between 0 and −20 V. The saturable absorber modulation depth and saturation fluence are found to be independent from the applied reverse bias.",
author = "Svetlana Zolotovskaya and M. Butkus and R. Haring and A. Able and W. Kaenders and Krestnikov, {I. L.} and Livshits, {D. A.} and Rafailov, {E. U.}",
year = "2012",
doi = "10.1364/OE.20.009038",
language = "English",
volume = "20",
pages = "9038--9045",
journal = "Optics Express",
issn = "1094-4087",
publisher = "Optical Society of American (OSA)",
number = "8",

}

RIS

TY - JOUR

T1 - p-i-n junction quantum dot saturable absorber mirror: electrical control of ultrafast dynamics

AU - Zolotovskaya, Svetlana

AU - Butkus, M.

AU - Haring, R.

AU - Able, A.

AU - Kaenders, W.

AU - Krestnikov, I. L.

AU - Livshits, D. A.

AU - Rafailov, E. U.

PY - 2012

Y1 - 2012

N2 - We report on nonlinear optical properties of a p-i-n junction quantum dot saturable absorber based on InGaAs/GaAs. Absorption recovery dynamics and nonlinear reflectivity are investigated for different reverse bias and pump power conditions. A decrease in absorption recovery time of nearly two orders of magnitude is demonstrated by applying a voltage between 0 and −20 V. The saturable absorber modulation depth and saturation fluence are found to be independent from the applied reverse bias.

AB - We report on nonlinear optical properties of a p-i-n junction quantum dot saturable absorber based on InGaAs/GaAs. Absorption recovery dynamics and nonlinear reflectivity are investigated for different reverse bias and pump power conditions. A decrease in absorption recovery time of nearly two orders of magnitude is demonstrated by applying a voltage between 0 and −20 V. The saturable absorber modulation depth and saturation fluence are found to be independent from the applied reverse bias.

U2 - 10.1364/OE.20.009038

DO - 10.1364/OE.20.009038

M3 - Journal article

VL - 20

SP - 9038

EP - 9045

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 8

ER -