Home > Research > Publications & Outputs > Power dependence of the photocurrent lineshape ...


Text available via DOI:

View graph of relations

Power dependence of the photocurrent lineshape in a semiconductor quantum dot

Research output: Contribution to journalJournal article

Article number193107
<mark>Journal publication date</mark>5/11/2007
<mark>Journal</mark>Applied Physics Letters
Issue number19
Number of pages3
<mark>Original language</mark>English


We propose a kinetic theory to describe the power dependence of the photocurrent lineshape in optically pumped quantum dots at low temperatures in both zero and finite magnetic fields. We show that there is a crossover power P-c, determined by the electron and hole tunneling rates, where the photocurrent no longer reflects the exciton lifetime. For P > P-c, we show that the photocurrent saturates due to the slow hole escape rate, whereas the linewidth increases with power. We analyze the spin-doublet lineshape in high magnetic fields and determine to what measure it reflects the degree of circular polarization of incident light.

Bibliographic note

Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 91, 193107 (2007) and may be found at http://link.aip.org/link/?APPLAB/91/193107/1