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Pulsed magnetic fields as a probe of self-assembled semiconductor nanostructures

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Pulsed magnetic fields as a probe of self-assembled semiconductor nanostructures. / Hayne, M ; Maes, J ; Bersier, S et al.
In: Physica B: Condensed Matter, Vol. 346-347, 30.04.2004, p. 421-427.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Hayne, M, Maes, J, Bersier, S, Henini, M, Muller-Kirsch, L, Heitz, R, Bimberg, D & Moshchalkov, VV 2004, 'Pulsed magnetic fields as a probe of self-assembled semiconductor nanostructures', Physica B: Condensed Matter, vol. 346-347, pp. 421-427. https://doi.org/10.1016/j.physb.2004.01.119

APA

Hayne, M., Maes, J., Bersier, S., Henini, M., Muller-Kirsch, L., Heitz, R., Bimberg, D., & Moshchalkov, V. V. (2004). Pulsed magnetic fields as a probe of self-assembled semiconductor nanostructures. Physica B: Condensed Matter, 346-347, 421-427. https://doi.org/10.1016/j.physb.2004.01.119

Vancouver

Hayne M, Maes J, Bersier S, Henini M, Muller-Kirsch L, Heitz R et al. Pulsed magnetic fields as a probe of self-assembled semiconductor nanostructures. Physica B: Condensed Matter. 2004 Apr 30;346-347:421-427. doi: 10.1016/j.physb.2004.01.119

Author

Hayne, M ; Maes, J ; Bersier, S et al. / Pulsed magnetic fields as a probe of self-assembled semiconductor nanostructures. In: Physica B: Condensed Matter. 2004 ; Vol. 346-347. pp. 421-427.

Bibtex

@article{03b175ab3345426d92f66a5714cc2c28,
title = "Pulsed magnetic fields as a probe of self-assembled semiconductor nanostructures",
abstract = "Pulsed magnetic fields are used to study a variety of self-assembled semiconductor nanostructures. We illustrate the power of the technique with two recent examples. In the first, we study confinement in InAs quantum dots on (1 0 0) and (3 1 1)B oriented GaAs substrates as a function of InAs coverage. We demonstrate that Stranski-Krastanow growth occurs for (1 0 0) substrates, but show that for (3 1 1)B substrates there is no such transition-rather the dots evolve from fluctuations in the wetting layer. In the second example, we investigate the Coulomb binding of 'free' electrons to holes confined to type-II GaSb/GaAs quantum dots. We find that at low laser power the electrons are repelled from the dots (by strain), but that by optical pumping the dots may be multiply charged, attracting the electrons, and more than doubling the binding energy. (C) 2004 Elsevier B.V. All rights reserved.",
keywords = "self-assembled quantum dots, pulsed magnetic fields, INP QUANTUM DOTS, MAGNETOPHOTOLUMINESCENCE, REINFORCEMENT, CONFINEMENT, DEPENDENCE, ELECTRON, RANGE",
author = "M Hayne and J Maes and S Bersier and M Henini and L Muller-Kirsch and R Heitz and D Bimberg and Moshchalkov, {V V}",
year = "2004",
month = apr,
day = "30",
doi = "10.1016/j.physb.2004.01.119",
language = "English",
volume = "346-347",
pages = "421--427",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "ELSEVIER SCIENCE BV",

}

RIS

TY - JOUR

T1 - Pulsed magnetic fields as a probe of self-assembled semiconductor nanostructures

AU - Hayne, M

AU - Maes, J

AU - Bersier, S

AU - Henini, M

AU - Muller-Kirsch, L

AU - Heitz, R

AU - Bimberg, D

AU - Moshchalkov, V V

PY - 2004/4/30

Y1 - 2004/4/30

N2 - Pulsed magnetic fields are used to study a variety of self-assembled semiconductor nanostructures. We illustrate the power of the technique with two recent examples. In the first, we study confinement in InAs quantum dots on (1 0 0) and (3 1 1)B oriented GaAs substrates as a function of InAs coverage. We demonstrate that Stranski-Krastanow growth occurs for (1 0 0) substrates, but show that for (3 1 1)B substrates there is no such transition-rather the dots evolve from fluctuations in the wetting layer. In the second example, we investigate the Coulomb binding of 'free' electrons to holes confined to type-II GaSb/GaAs quantum dots. We find that at low laser power the electrons are repelled from the dots (by strain), but that by optical pumping the dots may be multiply charged, attracting the electrons, and more than doubling the binding energy. (C) 2004 Elsevier B.V. All rights reserved.

AB - Pulsed magnetic fields are used to study a variety of self-assembled semiconductor nanostructures. We illustrate the power of the technique with two recent examples. In the first, we study confinement in InAs quantum dots on (1 0 0) and (3 1 1)B oriented GaAs substrates as a function of InAs coverage. We demonstrate that Stranski-Krastanow growth occurs for (1 0 0) substrates, but show that for (3 1 1)B substrates there is no such transition-rather the dots evolve from fluctuations in the wetting layer. In the second example, we investigate the Coulomb binding of 'free' electrons to holes confined to type-II GaSb/GaAs quantum dots. We find that at low laser power the electrons are repelled from the dots (by strain), but that by optical pumping the dots may be multiply charged, attracting the electrons, and more than doubling the binding energy. (C) 2004 Elsevier B.V. All rights reserved.

KW - self-assembled quantum dots

KW - pulsed magnetic fields

KW - INP QUANTUM DOTS

KW - MAGNETOPHOTOLUMINESCENCE

KW - REINFORCEMENT

KW - CONFINEMENT

KW - DEPENDENCE

KW - ELECTRON

KW - RANGE

U2 - 10.1016/j.physb.2004.01.119

DO - 10.1016/j.physb.2004.01.119

M3 - Journal article

VL - 346-347

SP - 421

EP - 427

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -