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Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering

Research output: Contribution to journalJournal article

Published

Journal publication date15/06/1999
JournalJournal of Applied Physics
Journal number12
Volume85
Number of pages4
Pages8419-8422
Original languageEnglish

Abstract

Very pure InAs epitaxial layers of high quantum efficiency have been grown by liquid phase epitaxy using Gd gettering of the growth solution. The residual carrier concentration was reduced to similar to 6 X 10(15) cm(-3) and the peak photoluminescence intensity increased considerably (between 10 and 100 times) using this technique. The low-temperature (4 K) photoluminescence spectra exhibited sharp bound exciton and donor-acceptor lines. The linewidth of the exciton was measured to be only 3.8 meV which is narrower than for undoped epitaxial InAs grown by other techniques. (C) 1999 American Institute of Physics. [S0021-8979(99)00612-X].