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Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering

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Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering. / Krier, A ; Gao, H H ; Sherstnev, V V .
In: Journal of Applied Physics, Vol. 85, No. 12, 15.06.1999, p. 8419-8422.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Krier, A, Gao, HH & Sherstnev, VV 1999, 'Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering', Journal of Applied Physics, vol. 85, no. 12, pp. 8419-8422. https://doi.org/10.1063/1.370691

APA

Krier, A., Gao, H. H., & Sherstnev, V. V. (1999). Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering. Journal of Applied Physics, 85(12), 8419-8422. https://doi.org/10.1063/1.370691

Vancouver

Krier A, Gao HH, Sherstnev VV. Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering. Journal of Applied Physics. 1999 Jun 15;85(12):8419-8422. doi: 10.1063/1.370691

Author

Krier, A ; Gao, H H ; Sherstnev, V V . / Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering. In: Journal of Applied Physics. 1999 ; Vol. 85, No. 12. pp. 8419-8422.

Bibtex

@article{78055c34256b4240963fab15447224f6,
title = "Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering",
abstract = "Very pure InAs epitaxial layers of high quantum efficiency have been grown by liquid phase epitaxy using Gd gettering of the growth solution. The residual carrier concentration was reduced to similar to 6 X 10(15) cm(-3) and the peak photoluminescence intensity increased considerably (between 10 and 100 times) using this technique. The low-temperature (4 K) photoluminescence spectra exhibited sharp bound exciton and donor-acceptor lines. The linewidth of the exciton was measured to be only 3.8 meV which is narrower than for undoped epitaxial InAs grown by other techniques. (C) 1999 American Institute of Physics. [S0021-8979(99)00612-X].",
author = "A Krier and Gao, {H H} and Sherstnev, {V V}",
year = "1999",
month = jun,
day = "15",
doi = "10.1063/1.370691",
language = "English",
volume = "85",
pages = "8419--8422",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "12",

}

RIS

TY - JOUR

T1 - Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering

AU - Krier, A

AU - Gao, H H

AU - Sherstnev, V V

PY - 1999/6/15

Y1 - 1999/6/15

N2 - Very pure InAs epitaxial layers of high quantum efficiency have been grown by liquid phase epitaxy using Gd gettering of the growth solution. The residual carrier concentration was reduced to similar to 6 X 10(15) cm(-3) and the peak photoluminescence intensity increased considerably (between 10 and 100 times) using this technique. The low-temperature (4 K) photoluminescence spectra exhibited sharp bound exciton and donor-acceptor lines. The linewidth of the exciton was measured to be only 3.8 meV which is narrower than for undoped epitaxial InAs grown by other techniques. (C) 1999 American Institute of Physics. [S0021-8979(99)00612-X].

AB - Very pure InAs epitaxial layers of high quantum efficiency have been grown by liquid phase epitaxy using Gd gettering of the growth solution. The residual carrier concentration was reduced to similar to 6 X 10(15) cm(-3) and the peak photoluminescence intensity increased considerably (between 10 and 100 times) using this technique. The low-temperature (4 K) photoluminescence spectra exhibited sharp bound exciton and donor-acceptor lines. The linewidth of the exciton was measured to be only 3.8 meV which is narrower than for undoped epitaxial InAs grown by other techniques. (C) 1999 American Institute of Physics. [S0021-8979(99)00612-X].

U2 - 10.1063/1.370691

DO - 10.1063/1.370691

M3 - Journal article

VL - 85

SP - 8419

EP - 8422

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -