We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK


97% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Radiation-induced statistical uncertainty in th...
View graph of relations

« Back

Radiation-induced statistical uncertainty in the threshold voltage measurement of MOSFET dosimeters.

Research output: Contribution to journalJournal article


Associated organisational unit

<mark>Journal publication date</mark>28/06/2004
<mark>Journal</mark>Physics in Medicine and Biology
Number of pages15
<mark>Original language</mark>English


The results of a recent study on the limiting uncertainties in the measurement of photon radiation dose with MOSFET dosimeters are reported. The statistical uncertainty in dose measurement from a single device has been measured before and after irradiation. The resulting increase in 1/f noise with radiation dose has been investigated via various analytical models. The limit of uncertainty in the ubiquitous linear trend of threshold voltage with dose has been measured and compared to two nonlinear models. Inter-device uncertainty has been investigated in a group of 40 devices, and preliminary evidence for kurtosis and skewness in the distributions for devices without external bias has been observed.