Home > Research > Publications & Outputs > Raman scattering in cluster-deposited nanogranu...

Research

Electronic data

Links

Text available via DOI:

Keywords

View graph of relations

Raman scattering in cluster-deposited nanogranular silicon films

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Raman scattering in cluster-deposited nanogranular silicon films. / Konstantinovic, Milan J ; Bersier, Stefan; Wang, Xin et al.
In: Physical review B, Vol. 66, No. 16, 161311, 15.10.2002, p. -.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Konstantinovic, MJ, Bersier, S, Wang, X, Hayne, M, Lievens, P, Silverans, RE & Moshchalkov, VV 2002, 'Raman scattering in cluster-deposited nanogranular silicon films', Physical review B, vol. 66, no. 16, 161311, pp. -. https://doi.org/10.1103/PhysRevB.66.161311

APA

Konstantinovic, M. J., Bersier, S., Wang, X., Hayne, M., Lievens, P., Silverans, R. E., & Moshchalkov, V. V. (2002). Raman scattering in cluster-deposited nanogranular silicon films. Physical review B, 66(16), -. Article 161311. https://doi.org/10.1103/PhysRevB.66.161311

Vancouver

Konstantinovic MJ, Bersier S, Wang X, Hayne M, Lievens P, Silverans RE et al. Raman scattering in cluster-deposited nanogranular silicon films. Physical review B. 2002 Oct 15;66(16):-. 161311. doi: 10.1103/PhysRevB.66.161311

Author

Konstantinovic, Milan J ; Bersier, Stefan ; Wang, Xin et al. / Raman scattering in cluster-deposited nanogranular silicon films. In: Physical review B. 2002 ; Vol. 66, No. 16. pp. -.

Bibtex

@article{c32eba17868b4d8a88ccda6b8cfac99e,
title = "Raman scattering in cluster-deposited nanogranular silicon films",
abstract = "We study nanograin size confinement effects, and the effect of the increase of local temperature on the first-order Raman spectrum in silicon nanogranular films obtained by cluster deposition. The local temperature was monitored by measuring the Stokes/antiStokes peak ratio with the laser power up to similar to20 kW/cm(2). We find large energy shifts, up to 30 cm(-1), and broadenings, up to 20 cm(-1), of the Raman-active mode, which we attribute to both laser heating and confinement effects. The phonon softening and phonon linewidth are calculated using a phenomenological model which takes into account disorder effects through the breakdown of the k = 0 Raman-scattering selection rule, and also anharmonicity, which is incorporated through the three- and four- phonon decay processes. Very good agreement with experimental data is obtained for calculated spectra with nanograin sizes of about 10 nm, and with an increase in the anisotropy constants with respect to those of bulk silicon.",
keywords = "POROUS SILICON, DEPENDENCE, PHONONS, DENSITY, SPECTRA, STATES, GAAS, SI",
author = "Konstantinovic, {Milan J} and Stefan Bersier and Xin Wang and M Hayne and Peter Lievens and Silverans, {Roger E} and Moshchalkov, {Victor V}",
note = "{\textcopyright} 2002 The American Physical Society",
year = "2002",
month = oct,
day = "15",
doi = "10.1103/PhysRevB.66.161311",
language = "English",
volume = "66",
pages = "--",
journal = "Physical review B",
issn = "1550-235X",
publisher = "AMER PHYSICAL SOC",
number = "16",

}

RIS

TY - JOUR

T1 - Raman scattering in cluster-deposited nanogranular silicon films

AU - Konstantinovic, Milan J

AU - Bersier, Stefan

AU - Wang, Xin

AU - Hayne, M

AU - Lievens, Peter

AU - Silverans, Roger E

AU - Moshchalkov, Victor V

N1 - © 2002 The American Physical Society

PY - 2002/10/15

Y1 - 2002/10/15

N2 - We study nanograin size confinement effects, and the effect of the increase of local temperature on the first-order Raman spectrum in silicon nanogranular films obtained by cluster deposition. The local temperature was monitored by measuring the Stokes/antiStokes peak ratio with the laser power up to similar to20 kW/cm(2). We find large energy shifts, up to 30 cm(-1), and broadenings, up to 20 cm(-1), of the Raman-active mode, which we attribute to both laser heating and confinement effects. The phonon softening and phonon linewidth are calculated using a phenomenological model which takes into account disorder effects through the breakdown of the k = 0 Raman-scattering selection rule, and also anharmonicity, which is incorporated through the three- and four- phonon decay processes. Very good agreement with experimental data is obtained for calculated spectra with nanograin sizes of about 10 nm, and with an increase in the anisotropy constants with respect to those of bulk silicon.

AB - We study nanograin size confinement effects, and the effect of the increase of local temperature on the first-order Raman spectrum in silicon nanogranular films obtained by cluster deposition. The local temperature was monitored by measuring the Stokes/antiStokes peak ratio with the laser power up to similar to20 kW/cm(2). We find large energy shifts, up to 30 cm(-1), and broadenings, up to 20 cm(-1), of the Raman-active mode, which we attribute to both laser heating and confinement effects. The phonon softening and phonon linewidth are calculated using a phenomenological model which takes into account disorder effects through the breakdown of the k = 0 Raman-scattering selection rule, and also anharmonicity, which is incorporated through the three- and four- phonon decay processes. Very good agreement with experimental data is obtained for calculated spectra with nanograin sizes of about 10 nm, and with an increase in the anisotropy constants with respect to those of bulk silicon.

KW - POROUS SILICON

KW - DEPENDENCE

KW - PHONONS

KW - DENSITY

KW - SPECTRA

KW - STATES

KW - GAAS

KW - SI

U2 - 10.1103/PhysRevB.66.161311

DO - 10.1103/PhysRevB.66.161311

M3 - Journal article

VL - 66

SP - -

JO - Physical review B

JF - Physical review B

SN - 1550-235X

IS - 16

M1 - 161311

ER -