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Home > Research > Publications & Outputs > Raman scattering in InAsxSbyP1-x-y alloys grown...
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Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.

Research output: Contribution to journalJournal article

Published

  • K. J. Cheetham
  • A. Krier
  • I. I. Patel
  • F. L. Martin
  • J-S Tzeng
  • C-J Wu
  • H-H Lin
  • EPSRC Studentship for KJC (Funder)
Journal publication date2/03/2011
JournalJournal of Physics D-Applied Physics
Journal number8
Volume44
Pages085405
Original languageEnglish

Abstract

The Raman spectra of quaternary InAsxSbyP1-x-y epitaxial layers nominally lattice-matched to (1 0 0) n-type InAs substrates are reported. The phonon peaks are identified for alloys covering a wide composition range extending into the miscibility gap. Three-mode behaviour was obtained across part of the composition range. InP-like longitudinal optical (LO) and transverse optical (TO) phonons were observed over the entire compositional range, but InAs-like LO phonons were only observed at high arsenic concentrations and no InSb-like TO phonons were observed. Disorder-related phonon peaks were obtained for alloy compositions within the miscibility gap.