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Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

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Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb. / Cheetham, K. J.; Carrington, P. J.; Krier, A.; Patel, I. I.; Martin, F. L.

In: Semiconductor Science and Technology, Vol. 27, No. 1, 015004, 01.2012, p. -.

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Cheetham, K. J. ; Carrington, P. J. ; Krier, A. ; Patel, I. I. ; Martin, F. L. / Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb. In: Semiconductor Science and Technology. 2012 ; Vol. 27, No. 1. pp. -.

Bibtex

@article{616a9a6b23e94969b5068769f35a0fe7,
title = "Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb",
abstract = "The Raman spectra of pentanary GaInAsSbP alloys are reported for the first time. Measurements were performed at room temperature on epilayers which were grown using liquid phase epitaxy outside of the miscibility gap and nominally lattice matched to (1 0 0) InAs and GaSb. The dominant phonon peaks in the spectra are identified and attributed to InSb-, InP-, GaAs- and (GaSb+InAs)-like phonons, along with disorder-activated phonons. No GaP-like phonons were observed. Further peaks were also attributed to disorder-activated optical and longitudinal acoustic phonons, associated with alloy disorder effects.",
author = "Cheetham, {K. J.} and Carrington, {P. J.} and A. Krier and Patel, {I. I.} and Martin, {F. L.}",
year = "2012",
month = jan
doi = "10.1088/0268-1242/27/1/015004",
language = "English",
volume = "27",
pages = "--",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "1",

}

RIS

TY - JOUR

T1 - Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

AU - Cheetham, K. J.

AU - Carrington, P. J.

AU - Krier, A.

AU - Patel, I. I.

AU - Martin, F. L.

PY - 2012/1

Y1 - 2012/1

N2 - The Raman spectra of pentanary GaInAsSbP alloys are reported for the first time. Measurements were performed at room temperature on epilayers which were grown using liquid phase epitaxy outside of the miscibility gap and nominally lattice matched to (1 0 0) InAs and GaSb. The dominant phonon peaks in the spectra are identified and attributed to InSb-, InP-, GaAs- and (GaSb+InAs)-like phonons, along with disorder-activated phonons. No GaP-like phonons were observed. Further peaks were also attributed to disorder-activated optical and longitudinal acoustic phonons, associated with alloy disorder effects.

AB - The Raman spectra of pentanary GaInAsSbP alloys are reported for the first time. Measurements were performed at room temperature on epilayers which were grown using liquid phase epitaxy outside of the miscibility gap and nominally lattice matched to (1 0 0) InAs and GaSb. The dominant phonon peaks in the spectra are identified and attributed to InSb-, InP-, GaAs- and (GaSb+InAs)-like phonons, along with disorder-activated phonons. No GaP-like phonons were observed. Further peaks were also attributed to disorder-activated optical and longitudinal acoustic phonons, associated with alloy disorder effects.

U2 - 10.1088/0268-1242/27/1/015004

DO - 10.1088/0268-1242/27/1/015004

M3 - Journal article

VL - 27

SP - -

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 1

M1 - 015004

ER -