12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Rashba spin-splitting in narrow gap III-V semic...
View graph of relations

« Back

Rashba spin-splitting in narrow gap III-V semiconductor quantum wells

Research output: Contribution to journalJournal article

Published

<mark>Journal publication date</mark>01/2004
<mark>Journal</mark>Physica E: Low-dimensional Systems and Nanostructures
Issue3-4
Volume20
Number of pages3
Pages433-435
<mark>Original language</mark>English

Abstract

Using Kane's 8-band k (.) p theory and the envelope function approximation we derive a tight binding Hamiltonian for III-V semiconductor quantum well structures, which accurately models band structure and spin-orbit coupling. By applying a potential difference across the well we have calculated the Rashba spin-splitting in the lowest conduction subband. For identical well widths the Rashba splitting in InSb is shown to be approximately twice that of InAs and, in all cases, passes through a weak maximum with increasing quasimomentum. (C) 2003 Elsevier B.V. All rights reserved.