Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Rashba spin-splitting in narrow gap III-V semiconductor quantum wells
AU - Stanley, J. P.
AU - Pattinson, N.
AU - Lambert, C. J.
AU - Jefferson, J. H.
PY - 2004/1
Y1 - 2004/1
N2 - Using Kane's 8-band k (.) p theory and the envelope function approximation we derive a tight binding Hamiltonian for III-V semiconductor quantum well structures, which accurately models band structure and spin-orbit coupling. By applying a potential difference across the well we have calculated the Rashba spin-splitting in the lowest conduction subband. For identical well widths the Rashba splitting in InSb is shown to be approximately twice that of InAs and, in all cases, passes through a weak maximum with increasing quasimomentum. (C) 2003 Elsevier B.V. All rights reserved.
AB - Using Kane's 8-band k (.) p theory and the envelope function approximation we derive a tight binding Hamiltonian for III-V semiconductor quantum well structures, which accurately models band structure and spin-orbit coupling. By applying a potential difference across the well we have calculated the Rashba spin-splitting in the lowest conduction subband. For identical well widths the Rashba splitting in InSb is shown to be approximately twice that of InAs and, in all cases, passes through a weak maximum with increasing quasimomentum. (C) 2003 Elsevier B.V. All rights reserved.
KW - Spintronics
KW - Rashba spin-splitting
KW - Quantum well
U2 - 10.1016/j.physe.2003.08.052
DO - 10.1016/j.physe.2003.08.052
M3 - Journal article
VL - 20
SP - 433
EP - 435
JO - Physica E: Low-dimensional Systems and Nanostructures
JF - Physica E: Low-dimensional Systems and Nanostructures
SN - 1386-9477
IS - 3-4
ER -