Home > Research > Publications & Outputs > Relevance of the purity level in a MetalOrganic...

Research

Associated organisational units

Links

Text available via DOI:

View graph of relations

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots. / Dimastrodonato, V.; Mereni, L. O.; Young, R. J. et al.
In: Journal of Crystal Growth, Vol. 315, No. 1, 15.01.2011, p. 119-122.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Dimastrodonato, V, Mereni, LO, Young, RJ & Pelucchi, E 2011, 'Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots', Journal of Crystal Growth, vol. 315, no. 1, pp. 119-122. https://doi.org/10.1016/j.jcrysgro.2010.09.011

APA

Dimastrodonato, V., Mereni, L. O., Young, R. J., & Pelucchi, E. (2011). Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots. Journal of Crystal Growth, 315(1), 119-122. https://doi.org/10.1016/j.jcrysgro.2010.09.011

Vancouver

Dimastrodonato V, Mereni LO, Young RJ, Pelucchi E. Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots. Journal of Crystal Growth. 2011 Jan 15;315(1):119-122. doi: 10.1016/j.jcrysgro.2010.09.011

Author

Dimastrodonato, V. ; Mereni, L. O. ; Young, R. J. et al. / Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots. In: Journal of Crystal Growth. 2011 ; Vol. 315, No. 1. pp. 119-122.

Bibtex

@article{58c7dbf6b4794276935cbc1f08c89e58,
title = "Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots",
abstract = "We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metal-organic vapour phase epitaxy on (1 1 1)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (similar to 27 mu eV) and comparable to those that can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems. (C) 2010 Elsevier B.V. All rights reserved.",
author = "V. Dimastrodonato and Mereni, {L. O.} and Young, {R. J.} and E. Pelucchi",
year = "2011",
month = jan,
day = "15",
doi = "10.1016/j.jcrysgro.2010.09.011",
language = "English",
volume = "315",
pages = "119--122",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

RIS

TY - JOUR

T1 - Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

AU - Dimastrodonato, V.

AU - Mereni, L. O.

AU - Young, R. J.

AU - Pelucchi, E.

PY - 2011/1/15

Y1 - 2011/1/15

N2 - We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metal-organic vapour phase epitaxy on (1 1 1)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (similar to 27 mu eV) and comparable to those that can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems. (C) 2010 Elsevier B.V. All rights reserved.

AB - We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metal-organic vapour phase epitaxy on (1 1 1)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (similar to 27 mu eV) and comparable to those that can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems. (C) 2010 Elsevier B.V. All rights reserved.

U2 - 10.1016/j.jcrysgro.2010.09.011

DO - 10.1016/j.jcrysgro.2010.09.011

M3 - Journal article

VL - 315

SP - 119

EP - 122

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -