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  • Hayne PRB 57 148113 1998

    Rights statement: © 1998 The American Physical Society

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Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions

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Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions. / Hayne, M ; Usher, Alan; Harris, Jeffrey J et al.
In: Physical review B, Vol. 57, No. 23, 15.06.1998, p. 14813-14817.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Hayne, M, Usher, A, Harris, JJ, Moshchalkov, VV & Foxon, CT 1998, 'Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions', Physical review B, vol. 57, no. 23, pp. 14813-14817. https://doi.org/10.1103/PhysRevB.57.14813

APA

Hayne, M., Usher, A., Harris, J. J., Moshchalkov, V. V., & Foxon, C. T. (1998). Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions. Physical review B, 57(23), 14813-14817. https://doi.org/10.1103/PhysRevB.57.14813

Vancouver

Hayne M, Usher A, Harris JJ, Moshchalkov VV, Foxon CT. Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions. Physical review B. 1998 Jun 15;57(23):14813-14817. doi: 10.1103/PhysRevB.57.14813

Author

Hayne, M ; Usher, Alan ; Harris, Jeffrey J et al. / Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions. In: Physical review B. 1998 ; Vol. 57, No. 23. pp. 14813-14817.

Bibtex

@article{6f778a9c8cfb4eda8df5b578dce70525,
title = "Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions",
abstract = "We have investigated the time-dependent mobility and density of a modulation-doped GaAs/AlxGa1-xAs heterojunction subsequent to the lionization of DX centers using the persistent photoconductivity effect. Our results are in excellent agreement with a simple theory of mobility Limited by independent charged scattering centers. We show that these scattering centers are fluctuations in the average impurity potential which principally arise due to the presence of both positively and negatively charged impurities, and that the effect of correlation among charged impurities can be treated in terms of the removal of individual potential fluctuations.",
keywords = "2-DIMENSIONAL ELECTRON-GAS, MOBILITY, GAAS, ALXGA1-XAS, HETEROSTRUCTURES",
author = "M Hayne and Alan Usher and Harris, {Jeffrey J} and Moshchalkov, {Victor V} and Foxon, {C Thomas}",
note = "{\textcopyright} 1998 The American Physical Society",
year = "1998",
month = jun,
day = "15",
doi = "10.1103/PhysRevB.57.14813",
language = "English",
volume = "57",
pages = "14813--14817",
journal = "Physical review B",
issn = "1550-235X",
publisher = "AMER PHYSICAL SOC",
number = "23",

}

RIS

TY - JOUR

T1 - Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions

AU - Hayne, M

AU - Usher, Alan

AU - Harris, Jeffrey J

AU - Moshchalkov, Victor V

AU - Foxon, C Thomas

N1 - © 1998 The American Physical Society

PY - 1998/6/15

Y1 - 1998/6/15

N2 - We have investigated the time-dependent mobility and density of a modulation-doped GaAs/AlxGa1-xAs heterojunction subsequent to the lionization of DX centers using the persistent photoconductivity effect. Our results are in excellent agreement with a simple theory of mobility Limited by independent charged scattering centers. We show that these scattering centers are fluctuations in the average impurity potential which principally arise due to the presence of both positively and negatively charged impurities, and that the effect of correlation among charged impurities can be treated in terms of the removal of individual potential fluctuations.

AB - We have investigated the time-dependent mobility and density of a modulation-doped GaAs/AlxGa1-xAs heterojunction subsequent to the lionization of DX centers using the persistent photoconductivity effect. Our results are in excellent agreement with a simple theory of mobility Limited by independent charged scattering centers. We show that these scattering centers are fluctuations in the average impurity potential which principally arise due to the presence of both positively and negatively charged impurities, and that the effect of correlation among charged impurities can be treated in terms of the removal of individual potential fluctuations.

KW - 2-DIMENSIONAL ELECTRON-GAS

KW - MOBILITY

KW - GAAS

KW - ALXGA1-XAS

KW - HETEROSTRUCTURES

U2 - 10.1103/PhysRevB.57.14813

DO - 10.1103/PhysRevB.57.14813

M3 - Journal article

VL - 57

SP - 14813

EP - 14817

JO - Physical review B

JF - Physical review B

SN - 1550-235X

IS - 23

ER -