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Resolution degradation of semiconductor detectors due to carrier trapping

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Resolution degradation of semiconductor detectors due to carrier trapping. / Kozorezov, Alexander G.; Wigmore, J. Keith; Owens, A. et al.
In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 546, No. 1-2, 01.07.2005, p. 209-212.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Kozorezov, AG, Wigmore, JK, Owens, A, den Hartog, R, Peacock, A & Al-Jawhari, HA 2005, 'Resolution degradation of semiconductor detectors due to carrier trapping', Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 546, no. 1-2, pp. 209-212. https://doi.org/10.1016/j.nima.2005.03.026

APA

Kozorezov, A. G., Wigmore, J. K., Owens, A., den Hartog, R., Peacock, A., & Al-Jawhari, H. A. (2005). Resolution degradation of semiconductor detectors due to carrier trapping. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 546(1-2), 209-212. https://doi.org/10.1016/j.nima.2005.03.026

Vancouver

Kozorezov AG, Wigmore JK, Owens A, den Hartog R, Peacock A, Al-Jawhari HA. Resolution degradation of semiconductor detectors due to carrier trapping. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2005 Jul 1;546(1-2):209-212. doi: 10.1016/j.nima.2005.03.026

Author

Kozorezov, Alexander G. ; Wigmore, J. Keith ; Owens, A. et al. / Resolution degradation of semiconductor detectors due to carrier trapping. In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2005 ; Vol. 546, No. 1-2. pp. 209-212.

Bibtex

@article{fd3603508d04400891e9585e438a6abe,
title = "Resolution degradation of semiconductor detectors due to carrier trapping",
abstract = "Incomplete charge collection in semiconductor X-ray detectors due to carrier trapping is recognized as an important source of signal broadening. In this paper we show the results of calculations of energy resolution for a TlBr detector using an analytic approach developed in our earlier work in which fluctuations in the distribution of photon absorption sites are related to fluctuations in the collected charge. Using measured values of transport parameters for electrons and holes in the detector material we obtained excellent agreement with experiment in the X-ray energy range 6–660 keV.",
keywords = "Semiconductor X-ray detector, Carrier dynamics, Energy resolution",
author = "Kozorezov, {Alexander G.} and Wigmore, {J. Keith} and A. Owens and {den Hartog}, R. and A. Peacock and Al-Jawhari, {H. A.}",
year = "2005",
month = jul,
day = "1",
doi = "10.1016/j.nima.2005.03.026",
language = "English",
volume = "546",
pages = "209--212",
journal = "Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "ELSEVIER SCIENCE BV",
number = "1-2",

}

RIS

TY - JOUR

T1 - Resolution degradation of semiconductor detectors due to carrier trapping

AU - Kozorezov, Alexander G.

AU - Wigmore, J. Keith

AU - Owens, A.

AU - den Hartog, R.

AU - Peacock, A.

AU - Al-Jawhari, H. A.

PY - 2005/7/1

Y1 - 2005/7/1

N2 - Incomplete charge collection in semiconductor X-ray detectors due to carrier trapping is recognized as an important source of signal broadening. In this paper we show the results of calculations of energy resolution for a TlBr detector using an analytic approach developed in our earlier work in which fluctuations in the distribution of photon absorption sites are related to fluctuations in the collected charge. Using measured values of transport parameters for electrons and holes in the detector material we obtained excellent agreement with experiment in the X-ray energy range 6–660 keV.

AB - Incomplete charge collection in semiconductor X-ray detectors due to carrier trapping is recognized as an important source of signal broadening. In this paper we show the results of calculations of energy resolution for a TlBr detector using an analytic approach developed in our earlier work in which fluctuations in the distribution of photon absorption sites are related to fluctuations in the collected charge. Using measured values of transport parameters for electrons and holes in the detector material we obtained excellent agreement with experiment in the X-ray energy range 6–660 keV.

KW - Semiconductor X-ray detector

KW - Carrier dynamics

KW - Energy resolution

U2 - 10.1016/j.nima.2005.03.026

DO - 10.1016/j.nima.2005.03.026

M3 - Journal article

VL - 546

SP - 209

EP - 212

JO - Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 1-2

ER -