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Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

Research output: Contribution to journalJournal article

Published
Article number151107
<mark>Journal publication date</mark>15/04/2019
<mark>Journal</mark>Applied Physics Letters
Issue number15
Volume114
Number of pages5
Publication statusPublished
Original languageEnglish

Abstract

We report the design, growth, processing, and characterization of resonant cavity enhanced photodiodes for the midwave infrared at ∼3.72 μm on GaSb. Using AlAsSb/GaSb mirrors, AlAsSb barrier and spacer layers and a thin 96 nm InAsSb absorber, we observed dark current and detectivity behavior superior to common InAsSb nBn detectors in the literature, with peak specific detectivity values of 8 × 10 10 and 1 × 10 10 cm Hz 1 / 2 W - 1 measured at 250 K and 300 K, respectively. In the same temperature range, the linewidth of the detector response was 60% where the enhancement due to the resonant cavity was ∼20x. We estimate that the devices can operate close to, or slightly above, the background-limited infrared performance limit imposed on broadband detectors for a 300 K scene.