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Room temperature ballistic transport in InSb quantum well nanodevices

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Room temperature ballistic transport in InSb quantum well nanodevices. / Gilbertson, A. M.; Kormanyos, A.; Buckle, P. D. et al.
In: Applied Physics Letters, Vol. 99, No. 24, 242101, 12.12.2011, p. -.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Gilbertson, AM, Kormanyos, A, Buckle, PD, Fearn, M, Ashley, T, Lambert, C, Solin, SA & Cohen, LF 2011, 'Room temperature ballistic transport in InSb quantum well nanodevices', Applied Physics Letters, vol. 99, no. 24, 242101, pp. -. https://doi.org/10.1063/1.3668107

APA

Gilbertson, A. M., Kormanyos, A., Buckle, P. D., Fearn, M., Ashley, T., Lambert, C., Solin, S. A., & Cohen, L. F. (2011). Room temperature ballistic transport in InSb quantum well nanodevices. Applied Physics Letters, 99(24), -. Article 242101. https://doi.org/10.1063/1.3668107

Vancouver

Gilbertson AM, Kormanyos A, Buckle PD, Fearn M, Ashley T, Lambert C et al. Room temperature ballistic transport in InSb quantum well nanodevices. Applied Physics Letters. 2011 Dec 12;99(24):-. 242101. doi: 10.1063/1.3668107

Author

Gilbertson, A. M. ; Kormanyos, A. ; Buckle, P. D. et al. / Room temperature ballistic transport in InSb quantum well nanodevices. In: Applied Physics Letters. 2011 ; Vol. 99, No. 24. pp. -.

Bibtex

@article{52a236cbf5874eb2b25b51439ffa65e7,
title = "Room temperature ballistic transport in InSb quantum well nanodevices",
abstract = "We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6)A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions. ",
author = "Gilbertson, {A. M.} and A. Kormanyos and Buckle, {P. D.} and M. Fearn and T. Ashley and Colin Lambert and Solin, {S. A.} and Cohen, {L. F.}",
year = "2011",
month = dec,
day = "12",
doi = "10.1063/1.3668107",
language = "English",
volume = "99",
pages = "--",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "24",

}

RIS

TY - JOUR

T1 - Room temperature ballistic transport in InSb quantum well nanodevices

AU - Gilbertson, A. M.

AU - Kormanyos, A.

AU - Buckle, P. D.

AU - Fearn, M.

AU - Ashley, T.

AU - Lambert, Colin

AU - Solin, S. A.

AU - Cohen, L. F.

PY - 2011/12/12

Y1 - 2011/12/12

N2 - We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6)A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions. 

AB - We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6)A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions. 

U2 - 10.1063/1.3668107

DO - 10.1063/1.3668107

M3 - Journal article

VL - 99

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 242101

ER -