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Room temperature photoluminescence at 4.5 mu m from InAsN

Research output: Contribution to journalJournal article

Published

Journal publication date26/03/2008
JournalJournal of Applied Physics
Journal number6
Volume103
Pages063520
Original languageEnglish

Abstract

Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4 K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5 µm is obtained. ©2008 American Institute of Physics

Bibliographic note

Article number: 063520