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Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .

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Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. . / Gao, H. H.; Krier, A.; Sherstnev, V. V.
In: Applied Physics Letters, Vol. 77, No. 6, 07.08.2000, p. 872-874.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Gao, HH, Krier, A & Sherstnev, VV 2000, 'Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .', Applied Physics Letters, vol. 77, no. 6, pp. 872-874. https://doi.org/10.1063/1.1306656

APA

Gao, H. H., Krier, A., & Sherstnev, V. V. (2000). Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. . Applied Physics Letters, 77(6), 872-874. https://doi.org/10.1063/1.1306656

Vancouver

Gao HH, Krier A, Sherstnev VV. Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. . Applied Physics Letters. 2000 Aug 7;77(6):872-874. doi: 10.1063/1.1306656

Author

Gao, H. H. ; Krier, A. ; Sherstnev, V. V. / Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. . In: Applied Physics Letters. 2000 ; Vol. 77, No. 6. pp. 872-874.

Bibtex

@article{7225ecb69175498a868766c3c356d113,
title = "Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .",
abstract = "An InAs0.89Sb0.11 photovoltaic detector that operates at room temperature in the 2.5-5 mu m mid-infrared wavelength region is reported. The photodiode has an extended spectral response compared with other currently available III-V room-temperature detectors. In order to accommodate the large lattice mismatch between the InAs0.89Sb0.11 active region and the InAs substrate, a buffer layer with an intermediate composition was introduced into the structure. In this way, we obtained room-temperature photodiodes with a cutoff wavelength near 5 mu m, a peak responsivity of 0.8 A/W, and a detectivity of 1.26 x 10(9) cm Hz(1/2)/W. These devices could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m, or as a replacement for PbSe photoconductors. (C) 2000 American Institute of Physics. [S0003-6951(00)02332-9].",
author = "Gao, {H. H.} and A. Krier and Sherstnev, {V. V.}",
note = "Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 77 (6), 2000 and may be found at http://link.aip.org/link/?APPLAB/77/872/1",
year = "2000",
month = aug,
day = "7",
doi = "10.1063/1.1306656",
language = "English",
volume = "77",
pages = "872--874",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "6",

}

RIS

TY - JOUR

T1 - Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .

AU - Gao, H. H.

AU - Krier, A.

AU - Sherstnev, V. V.

N1 - Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 77 (6), 2000 and may be found at http://link.aip.org/link/?APPLAB/77/872/1

PY - 2000/8/7

Y1 - 2000/8/7

N2 - An InAs0.89Sb0.11 photovoltaic detector that operates at room temperature in the 2.5-5 mu m mid-infrared wavelength region is reported. The photodiode has an extended spectral response compared with other currently available III-V room-temperature detectors. In order to accommodate the large lattice mismatch between the InAs0.89Sb0.11 active region and the InAs substrate, a buffer layer with an intermediate composition was introduced into the structure. In this way, we obtained room-temperature photodiodes with a cutoff wavelength near 5 mu m, a peak responsivity of 0.8 A/W, and a detectivity of 1.26 x 10(9) cm Hz(1/2)/W. These devices could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m, or as a replacement for PbSe photoconductors. (C) 2000 American Institute of Physics. [S0003-6951(00)02332-9].

AB - An InAs0.89Sb0.11 photovoltaic detector that operates at room temperature in the 2.5-5 mu m mid-infrared wavelength region is reported. The photodiode has an extended spectral response compared with other currently available III-V room-temperature detectors. In order to accommodate the large lattice mismatch between the InAs0.89Sb0.11 active region and the InAs substrate, a buffer layer with an intermediate composition was introduced into the structure. In this way, we obtained room-temperature photodiodes with a cutoff wavelength near 5 mu m, a peak responsivity of 0.8 A/W, and a detectivity of 1.26 x 10(9) cm Hz(1/2)/W. These devices could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m, or as a replacement for PbSe photoconductors. (C) 2000 American Institute of Physics. [S0003-6951(00)02332-9].

U2 - 10.1063/1.1306656

DO - 10.1063/1.1306656

M3 - Journal article

VL - 77

SP - 872

EP - 874

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 6

ER -