Scalable and site specific functionalization of reduced graphene oxide for circuit elements and flexible electronics

Physics

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Scalable and site specific functionalization of reduced graphene oxide for circuit elements and flexible electronics. / Soni, Mahesh; Kumar, Pawan; Pandey, Juhi et al.
In: Carbon, Vol. 128, 01.03.2018, p. 172-178.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Soni, M, Kumar, P, Pandey, J, Kumar Sharma, S & Soni, A 2018, 'Scalable and site specific functionalization of reduced graphene oxide for circuit elements and flexible electronics', Carbon, vol. 128, pp. 172-178. https://doi.org/10.1016/j.carbon.2017.11.087

APA

Soni, M., Kumar, P., Pandey, J., Kumar Sharma, S., & Soni, A. (2018). Scalable and site specific functionalization of reduced graphene oxide for circuit elements and flexible electronics. Carbon, 128, 172-178. https://doi.org/10.1016/j.carbon.2017.11.087

Vancouver

Soni M, Kumar P, Pandey J, Kumar Sharma S, Soni A. Scalable and site specific functionalization of reduced graphene oxide for circuit elements and flexible electronics. Carbon. 2018 Mar 1;128:172-178. Epub 2017 Nov 28. doi: 10.1016/j.carbon.2017.11.087

Author

Soni, Mahesh ; Kumar, Pawan ; Pandey, Juhi et al. / Scalable and site specific functionalization of reduced graphene oxide for circuit elements and flexible electronics. In: Carbon. 2018 ; Vol. 128. pp. 172-178.

Bibtex

@article{a7dcffb4eed84c2fa73903384e41e3d1,

title = "Scalable and site specific functionalization of reduced graphene oxide for circuit elements and flexible electronics",

abstract = "We demonstrate a rapid and facile approach towards scalable patterning of reduced graphene oxide (rGO) for interconnects in flexible electronic applications. We have used controlled UV light exposure for patterning of rGO over spin coated GO film, which has been demonstrated by various patterns of GO-rGO. Optical and conductivity contrast has been supported by spectroscopic data for GO and rGO regions. Electrical conductivity of completely exposed rGO (60 mS/m) is significantly (∼150 times) higher than unexposed GO, which is suggesting effectiveness of rGO for circuit elements and interconnect applications. The tunable GO reduction is used for fabrication of rGO-FET, on flexible substrates, with completely exposed rGO as source/drain/gate electrodes and partially exposed rGO as semiconducting channel. The site specific and large area patterning of GO-rGO is advantageous for its usage in lighter and wearable flexible electronics.",

keywords = "Reduced graphene oxide, Metal-free interconnects, Patterning for flexible electronics, rGO-FET device",

author = "Mahesh Soni and Pawan Kumar and Juhi Pandey and {Kumar Sharma}, Satinder and Ajay Soni",

year = "2018",

month = mar,

day = "1",

doi = "10.1016/j.carbon.2017.11.087",

language = "English",

volume = "128",

pages = "172--178",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Scalable and site specific functionalization of reduced graphene oxide for circuit elements and flexible electronics

AU - Soni, Mahesh

AU - Kumar, Pawan

AU - Pandey, Juhi

AU - Kumar Sharma, Satinder

AU - Soni, Ajay

PY - 2018/3/1

Y1 - 2018/3/1

N2 - We demonstrate a rapid and facile approach towards scalable patterning of reduced graphene oxide (rGO) for interconnects in flexible electronic applications. We have used controlled UV light exposure for patterning of rGO over spin coated GO film, which has been demonstrated by various patterns of GO-rGO. Optical and conductivity contrast has been supported by spectroscopic data for GO and rGO regions. Electrical conductivity of completely exposed rGO (60 mS/m) is significantly (∼150 times) higher than unexposed GO, which is suggesting effectiveness of rGO for circuit elements and interconnect applications. The tunable GO reduction is used for fabrication of rGO-FET, on flexible substrates, with completely exposed rGO as source/drain/gate electrodes and partially exposed rGO as semiconducting channel. The site specific and large area patterning of GO-rGO is advantageous for its usage in lighter and wearable flexible electronics.

AB - We demonstrate a rapid and facile approach towards scalable patterning of reduced graphene oxide (rGO) for interconnects in flexible electronic applications. We have used controlled UV light exposure for patterning of rGO over spin coated GO film, which has been demonstrated by various patterns of GO-rGO. Optical and conductivity contrast has been supported by spectroscopic data for GO and rGO regions. Electrical conductivity of completely exposed rGO (60 mS/m) is significantly (∼150 times) higher than unexposed GO, which is suggesting effectiveness of rGO for circuit elements and interconnect applications. The tunable GO reduction is used for fabrication of rGO-FET, on flexible substrates, with completely exposed rGO as source/drain/gate electrodes and partially exposed rGO as semiconducting channel. The site specific and large area patterning of GO-rGO is advantageous for its usage in lighter and wearable flexible electronics.

KW - Reduced graphene oxide

KW - Metal-free interconnects

KW - Patterning for flexible electronics

KW - rGO-FET device

U2 - 10.1016/j.carbon.2017.11.087

DO - 10.1016/j.carbon.2017.11.087

M3 - Journal article

VL - 128

SP - 172

EP - 178

JO - Carbon

JF - Carbon

SN - 0008-6223

ER -

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