TY - JOUR

T1 - Self-catalysed InAs1− xSbx nanowires grown directly on bare Si substrates

AU - Anyebe, Ezekiel

AU - Zhuang, Qiandong

PY - 2014/12

Y1 - 2014/12

N2 - We report the self-catalysed growth of InAs1 − xSbx nanowires directly on bare Si substrates. Vertically aligned and non-tapered InAs1−xSbx nanowires were realized via indium-assisted nucleation without using nanowire stems. The compositions of the InAs1 − xSbx nanowires were determined by high resolution X-ray diffraction (HRXRD). It is observed that the geometry of the nanowires is modified by the Sb flux resulting in an almost doubling of the lateral dimension and a corresponding suppression in the axial growth of the InAs1 − xSbx nanowires. This observation unravels a method to modify the geometry of InAs nanowire and open up a promising route for the direct integration of InAs1 − xSbx nanowires with the well-established Si platform.

AB - We report the self-catalysed growth of InAs1 − xSbx nanowires directly on bare Si substrates. Vertically aligned and non-tapered InAs1−xSbx nanowires were realized via indium-assisted nucleation without using nanowire stems. The compositions of the InAs1 − xSbx nanowires were determined by high resolution X-ray diffraction (HRXRD). It is observed that the geometry of the nanowires is modified by the Sb flux resulting in an almost doubling of the lateral dimension and a corresponding suppression in the axial growth of the InAs1 − xSbx nanowires. This observation unravels a method to modify the geometry of InAs nanowire and open up a promising route for the direct integration of InAs1 − xSbx nanowires with the well-established Si platform.

KW - Nanostructures

KW - Semiconductors

KW - Epitaxial growth

U2 - 10.1016/j.materresbull.2014.09.028

DO - 10.1016/j.materresbull.2014.09.028

M3 - Journal article

VL - 60

SP - 572

EP - 575

JO - Materials Research Bulletin

JF - Materials Research Bulletin

ER -