Home > Research > Publications & Outputs > Self-organization of the InGaAs/GaAs quantum do...

Research

Links

Text available via DOI:

Keywords

View graph of relations

Self-organization of the InGaAs/GaAs quantum dots superlattice

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Self-organization of the InGaAs/GaAs quantum dots superlattice. / Zhuang, Qiandong; Li, Hanxuan; Pan, Liang et al.
In: Journal of Crystal Growth, Vol. 201-202, No. 1-4, 1999, p. 1161-1163.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Zhuang, Q, Li, H, Pan, L, Li, J, Kong, M & Lin, L 1999, 'Self-organization of the InGaAs/GaAs quantum dots superlattice', Journal of Crystal Growth, vol. 201-202, no. 1-4, pp. 1161-1163. https://doi.org/10.1016/S0022-0248(99)00010-X

APA

Zhuang, Q., Li, H., Pan, L., Li, J., Kong, M., & Lin, L. (1999). Self-organization of the InGaAs/GaAs quantum dots superlattice. Journal of Crystal Growth, 201-202(1-4), 1161-1163. https://doi.org/10.1016/S0022-0248(99)00010-X

Vancouver

Zhuang Q, Li H, Pan L, Li J, Kong M, Lin L. Self-organization of the InGaAs/GaAs quantum dots superlattice. Journal of Crystal Growth. 1999;201-202(1-4):1161-1163. doi: 10.1016/S0022-0248(99)00010-X

Author

Zhuang, Qiandong ; Li, Hanxuan ; Pan, Liang et al. / Self-organization of the InGaAs/GaAs quantum dots superlattice. In: Journal of Crystal Growth. 1999 ; Vol. 201-202, No. 1-4. pp. 1161-1163.

Bibtex

@article{e5274c556a6e43d9b3fc564ea86620ef,
title = "Self-organization of the InGaAs/GaAs quantum dots superlattice",
abstract = "The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayers on GaAs (1 0 0) was investigated with cross-sectional transmission electron microscopy (XTEM), and double-crystal X-ray diffraction (DCXD). We found that the QDs spacing in the first layer can affect the vertical alignment of QDs. There seems to exist one critical lateral QD spacing, below which merging of QDs with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. Once the critical value of QDs spacing is reached, the InGaAs QDs of the first layer are simply reproduced in the upper layers. The X-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the QDs superlattice, and multi-quantum wells (QW) formed by the wetting layers around QDs.",
keywords = "Quantum dots, Superlattice, Vertical alignment",
author = "Qiandong Zhuang and Hanxuan Li and Liang Pan and Jinmin Li and Meiying Kong and Lanying Lin",
year = "1999",
doi = "10.1016/S0022-0248(99)00010-X",
language = "English",
volume = "201-202",
pages = "1161--1163",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

RIS

TY - JOUR

T1 - Self-organization of the InGaAs/GaAs quantum dots superlattice

AU - Zhuang, Qiandong

AU - Li, Hanxuan

AU - Pan, Liang

AU - Li, Jinmin

AU - Kong, Meiying

AU - Lin, Lanying

PY - 1999

Y1 - 1999

N2 - The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayers on GaAs (1 0 0) was investigated with cross-sectional transmission electron microscopy (XTEM), and double-crystal X-ray diffraction (DCXD). We found that the QDs spacing in the first layer can affect the vertical alignment of QDs. There seems to exist one critical lateral QD spacing, below which merging of QDs with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. Once the critical value of QDs spacing is reached, the InGaAs QDs of the first layer are simply reproduced in the upper layers. The X-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the QDs superlattice, and multi-quantum wells (QW) formed by the wetting layers around QDs.

AB - The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayers on GaAs (1 0 0) was investigated with cross-sectional transmission electron microscopy (XTEM), and double-crystal X-ray diffraction (DCXD). We found that the QDs spacing in the first layer can affect the vertical alignment of QDs. There seems to exist one critical lateral QD spacing, below which merging of QDs with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. Once the critical value of QDs spacing is reached, the InGaAs QDs of the first layer are simply reproduced in the upper layers. The X-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the QDs superlattice, and multi-quantum wells (QW) formed by the wetting layers around QDs.

KW - Quantum dots

KW - Superlattice

KW - Vertical alignment

U2 - 10.1016/S0022-0248(99)00010-X

DO - 10.1016/S0022-0248(99)00010-X

M3 - Journal article

VL - 201-202

SP - 1161

EP - 1163

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -