Home > Research > Publications & Outputs > Self-organization of wire-like InAs nanostructu...

Research

Links

Text available via DOI:

Keywords

View graph of relations

Self-organization of wire-like InAs nanostructures on InP

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Self-organization of wire-like InAs nanostructures on InP. / Li, Hanxuan ; Zhuang, Qiandong; Kong, Xiangwei et al.
In: Journal of Crystal Growth, Vol. 205, No. 4, 1999, p. 613-617.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Li, H, Zhuang, Q, Kong, X, Wang, Z & Daniels-Race, T 1999, 'Self-organization of wire-like InAs nanostructures on InP', Journal of Crystal Growth, vol. 205, no. 4, pp. 613-617. https://doi.org/10.1016/S0022-0248(99)00278-X

APA

Li, H., Zhuang, Q., Kong, X., Wang, Z., & Daniels-Race, T. (1999). Self-organization of wire-like InAs nanostructures on InP. Journal of Crystal Growth, 205(4), 613-617. https://doi.org/10.1016/S0022-0248(99)00278-X

Vancouver

Li H, Zhuang Q, Kong X, Wang Z, Daniels-Race T. Self-organization of wire-like InAs nanostructures on InP. Journal of Crystal Growth. 1999;205(4):613-617. doi: 10.1016/S0022-0248(99)00278-X

Author

Li, Hanxuan ; Zhuang, Qiandong ; Kong, Xiangwei et al. / Self-organization of wire-like InAs nanostructures on InP. In: Journal of Crystal Growth. 1999 ; Vol. 205, No. 4. pp. 613-617.

Bibtex

@article{dc88f43291304094a5eebf1d019a5a17,
title = "Self-organization of wire-like InAs nanostructures on InP",
abstract = "The initial InAs growth on InP(1 0 0) during molecular beam epitaxy has been investigated. The as-grown islands were shaped like nanowires and formed dense arrays over the entire surface in the 3–6 monolayer InAs deposition range. The wires were oriented along the [View the MathML source 1 0] direction. Transmission electron microscopy images confirm that the wires are coherently grown on the substrates. Our results suggest that the coherent wire-shaped island formation may be a possible method to fabricate self-organized InAs nanowires.",
keywords = " Quantum wires, InAs/InP, Molecular beam epitaxy, Self-organization",
author = "Hanxuan Li and Qiandong Zhuang and Xiangwei Kong and Zhanguo Wang and Theda Daniels-Race",
year = "1999",
doi = "10.1016/S0022-0248(99)00278-X",
language = "English",
volume = "205",
pages = "613--617",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "4",

}

RIS

TY - JOUR

T1 - Self-organization of wire-like InAs nanostructures on InP

AU - Li, Hanxuan

AU - Zhuang, Qiandong

AU - Kong, Xiangwei

AU - Wang, Zhanguo

AU - Daniels-Race, Theda

PY - 1999

Y1 - 1999

N2 - The initial InAs growth on InP(1 0 0) during molecular beam epitaxy has been investigated. The as-grown islands were shaped like nanowires and formed dense arrays over the entire surface in the 3–6 monolayer InAs deposition range. The wires were oriented along the [View the MathML source 1 0] direction. Transmission electron microscopy images confirm that the wires are coherently grown on the substrates. Our results suggest that the coherent wire-shaped island formation may be a possible method to fabricate self-organized InAs nanowires.

AB - The initial InAs growth on InP(1 0 0) during molecular beam epitaxy has been investigated. The as-grown islands were shaped like nanowires and formed dense arrays over the entire surface in the 3–6 monolayer InAs deposition range. The wires were oriented along the [View the MathML source 1 0] direction. Transmission electron microscopy images confirm that the wires are coherently grown on the substrates. Our results suggest that the coherent wire-shaped island formation may be a possible method to fabricate self-organized InAs nanowires.

KW - Quantum wires

KW - InAs/InP

KW - Molecular beam epitaxy

KW - Self-organization

U2 - 10.1016/S0022-0248(99)00278-X

DO - 10.1016/S0022-0248(99)00278-X

M3 - Journal article

VL - 205

SP - 613

EP - 617

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 4

ER -