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Home > Research > Publications & Outputs > Semiconductor-based THz plasmonic metamaterial
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Semiconductor-based THz plasmonic metamaterial

Research output: Contribution in Book/Report/ProceedingsPaper

Published

Publication date2013
Host publicationMillimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China
Place of publicationPiscataway, N.J.
PublisherIEEE
Number of pages2
Original languageEnglish

Conference

ConferenceUCMMT 2013
CountryUnited Kingdom
CityRome
Period9/09/1311/09/13

Conference

ConferenceUCMMT 2013
CountryUnited Kingdom
CityRome
Period9/09/1311/09/13

Abstract

A new metamaterial (MTM) for THz range applications is proposed. The unit cell consists of indium antimonide (InSb) and silicon (Si) single-layered fishnet MTM. The InSb-based MTM shows enhanced resonance in the THz band and can be efficiently tuned by changing doping level of the semiconductor