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Home > Research > Publications & Outputs > Semiconductor-based THz plasmonic metamaterial
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Semiconductor-based THz plasmonic metamaterial

Research output: Contribution in Book/Report/ProceedingsPaper

Published

Publication date2013
Host publicationMillimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China
Place of publicationPiscataway, N.J.
PublisherIEEE
Number of pages2
<mark>Original language</mark>English

Conference

ConferenceUCMMT 2013
CountryUnited Kingdom
CityRome
Period9/09/1311/09/13

Conference

ConferenceUCMMT 2013
CountryUnited Kingdom
CityRome
Period9/09/1311/09/13

Abstract

A new metamaterial (MTM) for THz range applications is proposed. The unit cell consists of indium antimonide (InSb) and silicon (Si) single-layered fishnet MTM. The InSb-based MTM shows enhanced resonance in the THz band and can be efficiently tuned by changing doping level of the semiconductor