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Semiconductor-based THz plasmonic metamaterial

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

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Semiconductor-based THz plasmonic metamaterial. / Letizia, Rosa.
Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China. Piscataway, N.J.: IEEE, 2013.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Letizia, R 2013, Semiconductor-based THz plasmonic metamaterial. in Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China. IEEE, Piscataway, N.J., UCMMT 2013, Rome, United Kingdom, 9/09/13. https://doi.org/10.1109/UCMMT.2013.6641545

APA

Letizia, R. (2013). Semiconductor-based THz plasmonic metamaterial. In Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China IEEE. https://doi.org/10.1109/UCMMT.2013.6641545

Vancouver

Letizia R. Semiconductor-based THz plasmonic metamaterial. In Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China. Piscataway, N.J.: IEEE. 2013 doi: 10.1109/UCMMT.2013.6641545

Author

Letizia, Rosa. / Semiconductor-based THz plasmonic metamaterial. Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China. Piscataway, N.J. : IEEE, 2013.

Bibtex

@inproceedings{51ef33b0ee724217aecedc0a3f1dc8fa,
title = "Semiconductor-based THz plasmonic metamaterial",
abstract = "A new metamaterial (MTM) for THz range applications is proposed. The unit cell consists of indium antimonide (InSb) and silicon (Si) single-layered fishnet MTM. The InSb-based MTM shows enhanced resonance in the THz band and can be efficiently tuned by changing doping level of the semiconductor",
keywords = "terahertz , semiconductor, plasmonics, Metamaterials",
author = "Rosa Letizia",
year = "2013",
doi = "10.1109/UCMMT.2013.6641545",
language = "English",
booktitle = "Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China",
publisher = "IEEE",
note = "UCMMT 2013 ; Conference date: 09-09-2013 Through 11-09-2013",

}

RIS

TY - GEN

T1 - Semiconductor-based THz plasmonic metamaterial

AU - Letizia, Rosa

PY - 2013

Y1 - 2013

N2 - A new metamaterial (MTM) for THz range applications is proposed. The unit cell consists of indium antimonide (InSb) and silicon (Si) single-layered fishnet MTM. The InSb-based MTM shows enhanced resonance in the THz band and can be efficiently tuned by changing doping level of the semiconductor

AB - A new metamaterial (MTM) for THz range applications is proposed. The unit cell consists of indium antimonide (InSb) and silicon (Si) single-layered fishnet MTM. The InSb-based MTM shows enhanced resonance in the THz band and can be efficiently tuned by changing doping level of the semiconductor

KW - terahertz

KW - semiconductor

KW - plasmonics

KW - Metamaterials

U2 - 10.1109/UCMMT.2013.6641545

DO - 10.1109/UCMMT.2013.6641545

M3 - Conference contribution/Paper

BT - Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China

PB - IEEE

CY - Piscataway, N.J.

T2 - UCMMT 2013

Y2 - 9 September 2013 through 11 September 2013

ER -