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Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>1/02/2012
<mark>Journal</mark>IEEE Photonics Technology Letters
Issue number3
Number of pages3
Pages (from-to)218-220
<mark>Original language</mark>English


We report GaInAsSb-based p-i-n photodiodes operating in the 2-2.4-mu m wavelength range grown on GaAs (100) substrates using the interfacial misfit (IMF) array technique. A zero-bias dynamic-resistance-area product of 260 Omega cm(2) and a room temperature peak responsivity of 0.8 A/W (at 2 mu m) with an estimated maximum detectivity (D*) of similar to 3.8x10(10) cm Hz(1/2) W-1 is obtained in the photodiodes at -0.2 V. These preliminary results of the IMF-based GaInAsSb detectors are comparable to similar detectors grown on native GaSb substrates demonstrating the potential of the IMF array growth mode to realize high-quality Sb-based infrared detectors on GaAs substrates.