Research output: Contribution to journal › Journal article
|<mark>Journal publication date</mark>||1/02/2012|
|<mark>Journal</mark>||IEEE Photonics Technology Letters|
|Number of pages||3|
We report GaInAsSb-based p-i-n photodiodes operating in the 2-2.4-mu m wavelength range grown on GaAs (100) substrates using the interfacial misfit (IMF) array technique. A zero-bias dynamic-resistance-area product of 260 Omega cm(2) and a room temperature peak responsivity of 0.8 A/W (at 2 mu m) with an estimated maximum detectivity (D*) of similar to 3.8x10(10) cm Hz(1/2) W-1 is obtained in the photodiodes at -0.2 V. These preliminary results of the IMF-based GaInAsSb detectors are comparable to similar detectors grown on native GaSb substrates demonstrating the potential of the IMF array growth mode to realize high-quality Sb-based infrared detectors on GaAs substrates.