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Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique

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Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique. / Nunna, Kalyan Chakravarthy; Tan, Siew Li; Reyner, Charles J. et al.
In: IEEE Photonics Technology Letters, Vol. 24, No. 3, 01.02.2012, p. 218-220.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Nunna, KC, Tan, SL, Reyner, CJ, Marshall, ARJ, Liang, B, Jallipalli, A, David, JPR & Huffaker, DL 2012, 'Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique', IEEE Photonics Technology Letters, vol. 24, no. 3, pp. 218-220. https://doi.org/10.1109/LPT.2011.2177253

APA

Nunna, K. C., Tan, S. L., Reyner, C. J., Marshall, A. R. J., Liang, B., Jallipalli, A., David, J. P. R., & Huffaker, D. L. (2012). Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique. IEEE Photonics Technology Letters, 24(3), 218-220. https://doi.org/10.1109/LPT.2011.2177253

Vancouver

Nunna KC, Tan SL, Reyner CJ, Marshall ARJ, Liang B, Jallipalli A et al. Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique. IEEE Photonics Technology Letters. 2012 Feb 1;24(3):218-220. doi: 10.1109/LPT.2011.2177253

Author

Nunna, Kalyan Chakravarthy ; Tan, Siew Li ; Reyner, Charles J. et al. / Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique. In: IEEE Photonics Technology Letters. 2012 ; Vol. 24, No. 3. pp. 218-220.

Bibtex

@article{259c48118dcd4aebb3d5b01ebcd9ccc3,
title = "Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique",
abstract = "We report GaInAsSb-based p-i-n photodiodes operating in the 2-2.4-mu m wavelength range grown on GaAs (100) substrates using the interfacial misfit (IMF) array technique. A zero-bias dynamic-resistance-area product of 260 Omega cm(2) and a room temperature peak responsivity of 0.8 A/W (at 2 mu m) with an estimated maximum detectivity (D*) of similar to 3.8x10(10) cm Hz(1/2) W-1 is obtained in the photodiodes at -0.2 V. These preliminary results of the IMF-based GaInAsSb detectors are comparable to similar detectors grown on native GaSb substrates demonstrating the potential of the IMF array growth mode to realize high-quality Sb-based infrared detectors on GaAs substrates.",
keywords = "2-$mu{rm m}$-photodetectors , GaInAsSb , GaSb on GaAs , InGaAsSb , PIN photodiodes , infrared photodetectors , interfacial misfit arrays , short-wave infrared",
author = "Nunna, {Kalyan Chakravarthy} and Tan, {Siew Li} and Reyner, {Charles J.} and Marshall, {Andrew Robert Julian} and Baolai Liang and Anitha Jallipalli and David, {John P. R.} and Huffaker, {Diana L.}",
year = "2012",
month = feb,
day = "1",
doi = "10.1109/LPT.2011.2177253",
language = "English",
volume = "24",
pages = "218--220",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

RIS

TY - JOUR

T1 - Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique

AU - Nunna, Kalyan Chakravarthy

AU - Tan, Siew Li

AU - Reyner, Charles J.

AU - Marshall, Andrew Robert Julian

AU - Liang, Baolai

AU - Jallipalli, Anitha

AU - David, John P. R.

AU - Huffaker, Diana L.

PY - 2012/2/1

Y1 - 2012/2/1

N2 - We report GaInAsSb-based p-i-n photodiodes operating in the 2-2.4-mu m wavelength range grown on GaAs (100) substrates using the interfacial misfit (IMF) array technique. A zero-bias dynamic-resistance-area product of 260 Omega cm(2) and a room temperature peak responsivity of 0.8 A/W (at 2 mu m) with an estimated maximum detectivity (D*) of similar to 3.8x10(10) cm Hz(1/2) W-1 is obtained in the photodiodes at -0.2 V. These preliminary results of the IMF-based GaInAsSb detectors are comparable to similar detectors grown on native GaSb substrates demonstrating the potential of the IMF array growth mode to realize high-quality Sb-based infrared detectors on GaAs substrates.

AB - We report GaInAsSb-based p-i-n photodiodes operating in the 2-2.4-mu m wavelength range grown on GaAs (100) substrates using the interfacial misfit (IMF) array technique. A zero-bias dynamic-resistance-area product of 260 Omega cm(2) and a room temperature peak responsivity of 0.8 A/W (at 2 mu m) with an estimated maximum detectivity (D*) of similar to 3.8x10(10) cm Hz(1/2) W-1 is obtained in the photodiodes at -0.2 V. These preliminary results of the IMF-based GaInAsSb detectors are comparable to similar detectors grown on native GaSb substrates demonstrating the potential of the IMF array growth mode to realize high-quality Sb-based infrared detectors on GaAs substrates.

KW - 2-$mu{rm m}$-photodetectors

KW - GaInAsSb

KW - GaSb on GaAs

KW - InGaAsSb

KW - PIN photodiodes

KW - infrared photodetectors

KW - interfacial misfit arrays

KW - short-wave infrared

U2 - 10.1109/LPT.2011.2177253

DO - 10.1109/LPT.2011.2177253

M3 - Journal article

VL - 24

SP - 218

EP - 220

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 3

ER -