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Silicon depletion layer actuators

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Silicon depletion layer actuators. / Ransley, J. H. T.; Aziz, A.; Durkan, C. et al.
In: Applied Physics Letters, Vol. 92, No. 18, 184103, 05.05.2008.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Ransley, JHT, Aziz, A, Durkan, C & Seshia, AA 2008, 'Silicon depletion layer actuators', Applied Physics Letters, vol. 92, no. 18, 184103. https://doi.org/10.1063/1.2920440

APA

Ransley, J. H. T., Aziz, A., Durkan, C., & Seshia, A. A. (2008). Silicon depletion layer actuators. Applied Physics Letters, 92(18), Article 184103. https://doi.org/10.1063/1.2920440

Vancouver

Ransley JHT, Aziz A, Durkan C, Seshia AA. Silicon depletion layer actuators. Applied Physics Letters. 2008 May 5;92(18):184103. doi: 10.1063/1.2920440

Author

Ransley, J. H. T. ; Aziz, A. ; Durkan, C. et al. / Silicon depletion layer actuators. In: Applied Physics Letters. 2008 ; Vol. 92, No. 18.

Bibtex

@article{b8e1427bcf3d4bb7801ac4078a0296b5,
title = "Silicon depletion layer actuators",
abstract = "The uncompensated donor or acceptor atoms present within the depletion layer of a diode can be employed in an electrostatic actuator, which utilizes the force between opposing. charges on either side of the semiconductor junction. We describe the theory of this actuator and demonstrate its application for the case of a diode on the top surface of a silicon cantilever. The Schottky diodes fabricated on the top surface of cantilevers were used to drive them into resonance. As the actuator driving voltages are varied, the amplitude of vibration of the cantilevers changes, which is in agreement with the theoretical predictions. (C) 2008 American Institute of Physics.",
keywords = "CANTILEVERS",
author = "Ransley, {J. H. T.} and A. Aziz and C. Durkan and Seshia, {A. A.}",
year = "2008",
month = may,
day = "5",
doi = "10.1063/1.2920440",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "18",

}

RIS

TY - JOUR

T1 - Silicon depletion layer actuators

AU - Ransley, J. H. T.

AU - Aziz, A.

AU - Durkan, C.

AU - Seshia, A. A.

PY - 2008/5/5

Y1 - 2008/5/5

N2 - The uncompensated donor or acceptor atoms present within the depletion layer of a diode can be employed in an electrostatic actuator, which utilizes the force between opposing. charges on either side of the semiconductor junction. We describe the theory of this actuator and demonstrate its application for the case of a diode on the top surface of a silicon cantilever. The Schottky diodes fabricated on the top surface of cantilevers were used to drive them into resonance. As the actuator driving voltages are varied, the amplitude of vibration of the cantilevers changes, which is in agreement with the theoretical predictions. (C) 2008 American Institute of Physics.

AB - The uncompensated donor or acceptor atoms present within the depletion layer of a diode can be employed in an electrostatic actuator, which utilizes the force between opposing. charges on either side of the semiconductor junction. We describe the theory of this actuator and demonstrate its application for the case of a diode on the top surface of a silicon cantilever. The Schottky diodes fabricated on the top surface of cantilevers were used to drive them into resonance. As the actuator driving voltages are varied, the amplitude of vibration of the cantilevers changes, which is in agreement with the theoretical predictions. (C) 2008 American Institute of Physics.

KW - CANTILEVERS

U2 - 10.1063/1.2920440

DO - 10.1063/1.2920440

M3 - Journal article

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 184103

ER -