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Silicon-based single quantum dot emission in the telecoms C‑band

Research output: Contribution to journalJournal article

<mark>Journal publication date</mark>19/07/2017
<mark>Journal</mark>ACS Photonics
Issue number7
Number of pages7
Pages (from-to)1740-1746
Early online date20/06/17
<mark>Original language</mark>English


We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.

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This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher.