Home > Research > Publications & Outputs > Silicon-based single quantum dot emission in th...

Electronic data

  • acsphotonics.7b00276

    Final published version, 3 MB, PDF-document

    Available under license: CC BY: Creative Commons Attribution 4.0 International License

Links

Text available via DOI:

View graph of relations

Silicon-based single quantum dot emission in the telecoms C‑band

Research output: Contribution to journalJournal article

Published
Close
<mark>Journal publication date</mark>19/07/2017
<mark>Journal</mark>ACS Photonics
Issue number7
Volume4
Number of pages7
Pages (from-to)1740-1746
<mark>State</mark>Published
Early online date20/06/17
<mark>Original language</mark>English

Abstract

We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.

Bibliographic note

This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher.