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    Rights statement: Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 103, (6), 2013 and may be found at http://scitation.aip.org/content/aip/journal/apl/103/6/10.1063/1.4818126

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Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

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Article number063902
<mark>Journal publication date</mark>6/08/2013
<mark>Journal</mark>Applied Physics Letters
Issue number6
Volume103
Number of pages4
Publication statusE-pub ahead of print
Early online date6/08/13
Original languageEnglish

Abstract

The extended photo-response of solar cells containing ten periods of GaSb/GaAs quantum rings imbedded in the p-i-n junction has been described using a single-band representation of the type-II quantum ring structure. By fitting the experimental data, the authors were able to deduce that the quantum rings are well represented by a Gaussian height distribution and a large valence band discontinuity. The simulated band of states is shown to be well matched to the photoluminescence analysis of the structure, with the inhomogeneous size distribution resulting in a band of hole states roughly 390 meV above the valence band.

Bibliographic note

Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 103, (6), 2013 and may be found at http://scitation.aip.org/content/aip/journal/apl/103/6/10.1063/1.4818126