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Single electron transport in a free-standing quantum dot

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Single electron transport in a free-standing quantum dot. / Chorley, S. J.; Smith, C. G.; Perez-Martinez, F. et al.
In: Microelectronics Journal, Vol. 39, No. 3-4, 03.2008, p. 314-317.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Chorley, SJ, Smith, CG, Perez-Martinez, F, Prance, J, Atkinson, P, Ritchie, DA & Jones, GAC 2008, 'Single electron transport in a free-standing quantum dot', Microelectronics Journal, vol. 39, no. 3-4, pp. 314-317. https://doi.org/10.1016/j.mejo.2007.07.017

APA

Chorley, S. J., Smith, C. G., Perez-Martinez, F., Prance, J., Atkinson, P., Ritchie, D. A., & Jones, G. A. C. (2008). Single electron transport in a free-standing quantum dot. Microelectronics Journal, 39(3-4), 314-317. https://doi.org/10.1016/j.mejo.2007.07.017

Vancouver

Chorley SJ, Smith CG, Perez-Martinez F, Prance J, Atkinson P, Ritchie DA et al. Single electron transport in a free-standing quantum dot. Microelectronics Journal. 2008 Mar;39(3-4):314-317. doi: 10.1016/j.mejo.2007.07.017

Author

Chorley, S. J. ; Smith, C. G. ; Perez-Martinez, F. et al. / Single electron transport in a free-standing quantum dot. In: Microelectronics Journal. 2008 ; Vol. 39, No. 3-4. pp. 314-317.

Bibtex

@article{bb110002e29a42ed81a04c2fee07425e,
title = "Single electron transport in a free-standing quantum dot",
abstract = "We have fabricated a single quantum dot in the two-dimensional electron gas of a free-standing GaAs/AlGaAs heterostructure. Standard processing techniques are used to define the dot on a narrow mesa and selective etching undercuts the device to form a 120 nm thick free-standing beam connected to the substrate by source and drain regions. Work by Weig et al. [Phys. Rev. Lett. 92(4) (2004) 046804] on similar devices has provided evidence for phonon blockade which suppresses conduction at low temperatures and bias. Further studies are presented here that can only partially be explained by this theory. A similar gap in conductance has been seen, but evolution of the structure in a magnetic field suggests an alternative explanation of multiple dots in series, may better explain the results. (",
author = "Chorley, {S. J.} and Smith, {C. G.} and F. Perez-Martinez and J. Prance and P. Atkinson and Ritchie, {D. A.} and Jones, {G. A. C.}",
year = "2008",
month = mar,
doi = "10.1016/j.mejo.2007.07.017",
language = "English",
volume = "39",
pages = "314--317",
journal = "Microelectronics Journal",
issn = "0026-2692",
publisher = "Elsevier Limited",
number = "3-4",

}

RIS

TY - JOUR

T1 - Single electron transport in a free-standing quantum dot

AU - Chorley, S. J.

AU - Smith, C. G.

AU - Perez-Martinez, F.

AU - Prance, J.

AU - Atkinson, P.

AU - Ritchie, D. A.

AU - Jones, G. A. C.

PY - 2008/3

Y1 - 2008/3

N2 - We have fabricated a single quantum dot in the two-dimensional electron gas of a free-standing GaAs/AlGaAs heterostructure. Standard processing techniques are used to define the dot on a narrow mesa and selective etching undercuts the device to form a 120 nm thick free-standing beam connected to the substrate by source and drain regions. Work by Weig et al. [Phys. Rev. Lett. 92(4) (2004) 046804] on similar devices has provided evidence for phonon blockade which suppresses conduction at low temperatures and bias. Further studies are presented here that can only partially be explained by this theory. A similar gap in conductance has been seen, but evolution of the structure in a magnetic field suggests an alternative explanation of multiple dots in series, may better explain the results. (

AB - We have fabricated a single quantum dot in the two-dimensional electron gas of a free-standing GaAs/AlGaAs heterostructure. Standard processing techniques are used to define the dot on a narrow mesa and selective etching undercuts the device to form a 120 nm thick free-standing beam connected to the substrate by source and drain regions. Work by Weig et al. [Phys. Rev. Lett. 92(4) (2004) 046804] on similar devices has provided evidence for phonon blockade which suppresses conduction at low temperatures and bias. Further studies are presented here that can only partially be explained by this theory. A similar gap in conductance has been seen, but evolution of the structure in a magnetic field suggests an alternative explanation of multiple dots in series, may better explain the results. (

U2 - 10.1016/j.mejo.2007.07.017

DO - 10.1016/j.mejo.2007.07.017

M3 - Journal article

VL - 39

SP - 314

EP - 317

JO - Microelectronics Journal

JF - Microelectronics Journal

SN - 0026-2692

IS - 3-4

ER -