Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Single electron transport in a free-standing quantum dot
AU - Chorley, S. J.
AU - Smith, C. G.
AU - Perez-Martinez, F.
AU - Prance, J.
AU - Atkinson, P.
AU - Ritchie, D. A.
AU - Jones, G. A. C.
PY - 2008/3
Y1 - 2008/3
N2 - We have fabricated a single quantum dot in the two-dimensional electron gas of a free-standing GaAs/AlGaAs heterostructure. Standard processing techniques are used to define the dot on a narrow mesa and selective etching undercuts the device to form a 120 nm thick free-standing beam connected to the substrate by source and drain regions. Work by Weig et al. [Phys. Rev. Lett. 92(4) (2004) 046804] on similar devices has provided evidence for phonon blockade which suppresses conduction at low temperatures and bias. Further studies are presented here that can only partially be explained by this theory. A similar gap in conductance has been seen, but evolution of the structure in a magnetic field suggests an alternative explanation of multiple dots in series, may better explain the results. (
AB - We have fabricated a single quantum dot in the two-dimensional electron gas of a free-standing GaAs/AlGaAs heterostructure. Standard processing techniques are used to define the dot on a narrow mesa and selective etching undercuts the device to form a 120 nm thick free-standing beam connected to the substrate by source and drain regions. Work by Weig et al. [Phys. Rev. Lett. 92(4) (2004) 046804] on similar devices has provided evidence for phonon blockade which suppresses conduction at low temperatures and bias. Further studies are presented here that can only partially be explained by this theory. A similar gap in conductance has been seen, but evolution of the structure in a magnetic field suggests an alternative explanation of multiple dots in series, may better explain the results. (
U2 - 10.1016/j.mejo.2007.07.017
DO - 10.1016/j.mejo.2007.07.017
M3 - Journal article
VL - 39
SP - 314
EP - 317
JO - Microelectronics Journal
JF - Microelectronics Journal
SN - 0026-2692
IS - 3-4
ER -