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Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels

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Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels. / Bin Esro, Mazran; Mazzocco, Riccardo; Vourlias, G. et al.
2015. Poster session presented at EMRS 2015, Lille, United Kingdom.

Research output: Contribution to conference - Without ISBN/ISSN Posterpeer-review

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Bin Esro M, Mazzocco R, Vourlias G, Krier A, Milne WI, Kolosov O et al.. Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels. 2015. Poster session presented at EMRS 2015, Lille, United Kingdom.

Author

Bin Esro, Mazran ; Mazzocco, Riccardo ; Vourlias, G. et al. / Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels. Poster session presented at EMRS 2015, Lille, United Kingdom.

Bibtex

@conference{db1f4fb63f9949aab3895c47c979a4c2,
title = "Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels",
abstract = "High-k dielectrics are extensively studied as alternatives to SiO2 as gate dielectrics for the next generation of field-effect transistors employing metal-oxide semiconducting channels. Amongst the wide range of high-k dielectrics LaAlO3 combines the advantages of the high permittivity of La2O3 with the chemical and thermal stability of Al2O3 and exhibits desirable chemical and electrical properties without the shortcomings of each individual material retaining at the same time a relatively high permittivity and large band gap. LaAlO3 films have been deposited by a variety of techniques including MBE, PLD, magnetron sputtering, sol-gel, ALD and MOCVD. Here, we report the deposition of a-LaAlO3 thin films as a function of the aluminium to lanthanum atomic ratio using spray pyrolysis, a simple and large-area-compatible deposition technique. The films were studied by means of atomic force microscopy, X-ray diffraction, impedance spectroscopy, UV–Visible absorption spectroscopy, spectroscopic ellipsometry, and field-effect measurements. Analyses reveal amorphous LaAlO3 that exhibit wide band gap (6.2 eV), low roughness (1.3 nm), high dielectric constant (17), and high breakdown voltage in excess of 3 MV/cm. Thin film transistors based on a-LaAlO3 gate dielectrics employing spray coated ZnO channels exhibit excellent electron transport characteristics with negligible hysteresis, high on/off current modulation ratio (>10^7) and electron mobility in excess of 12 cm^2 V−1 s−1.",
keywords = "High-k Dielectrics, Lanthanum Aluminate, Transparent Electronics, Thin Film Transistors",
author = "{Bin Esro}, Mazran and Riccardo Mazzocco and G. Vourlias and Anthony Krier and W.I. Milne and Oleg Kolosov and George Adamopoulos",
year = "2015",
language = "English",
note = "EMRS 2015 ; Conference date: 11-05-2015 Through 15-05-2015",

}

RIS

TY - CONF

T1 - Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels

AU - Bin Esro, Mazran

AU - Mazzocco, Riccardo

AU - Vourlias, G.

AU - Krier, Anthony

AU - Milne, W.I.

AU - Kolosov, Oleg

AU - Adamopoulos, George

PY - 2015

Y1 - 2015

N2 - High-k dielectrics are extensively studied as alternatives to SiO2 as gate dielectrics for the next generation of field-effect transistors employing metal-oxide semiconducting channels. Amongst the wide range of high-k dielectrics LaAlO3 combines the advantages of the high permittivity of La2O3 with the chemical and thermal stability of Al2O3 and exhibits desirable chemical and electrical properties without the shortcomings of each individual material retaining at the same time a relatively high permittivity and large band gap. LaAlO3 films have been deposited by a variety of techniques including MBE, PLD, magnetron sputtering, sol-gel, ALD and MOCVD. Here, we report the deposition of a-LaAlO3 thin films as a function of the aluminium to lanthanum atomic ratio using spray pyrolysis, a simple and large-area-compatible deposition technique. The films were studied by means of atomic force microscopy, X-ray diffraction, impedance spectroscopy, UV–Visible absorption spectroscopy, spectroscopic ellipsometry, and field-effect measurements. Analyses reveal amorphous LaAlO3 that exhibit wide band gap (6.2 eV), low roughness (1.3 nm), high dielectric constant (17), and high breakdown voltage in excess of 3 MV/cm. Thin film transistors based on a-LaAlO3 gate dielectrics employing spray coated ZnO channels exhibit excellent electron transport characteristics with negligible hysteresis, high on/off current modulation ratio (>10^7) and electron mobility in excess of 12 cm^2 V−1 s−1.

AB - High-k dielectrics are extensively studied as alternatives to SiO2 as gate dielectrics for the next generation of field-effect transistors employing metal-oxide semiconducting channels. Amongst the wide range of high-k dielectrics LaAlO3 combines the advantages of the high permittivity of La2O3 with the chemical and thermal stability of Al2O3 and exhibits desirable chemical and electrical properties without the shortcomings of each individual material retaining at the same time a relatively high permittivity and large band gap. LaAlO3 films have been deposited by a variety of techniques including MBE, PLD, magnetron sputtering, sol-gel, ALD and MOCVD. Here, we report the deposition of a-LaAlO3 thin films as a function of the aluminium to lanthanum atomic ratio using spray pyrolysis, a simple and large-area-compatible deposition technique. The films were studied by means of atomic force microscopy, X-ray diffraction, impedance spectroscopy, UV–Visible absorption spectroscopy, spectroscopic ellipsometry, and field-effect measurements. Analyses reveal amorphous LaAlO3 that exhibit wide band gap (6.2 eV), low roughness (1.3 nm), high dielectric constant (17), and high breakdown voltage in excess of 3 MV/cm. Thin film transistors based on a-LaAlO3 gate dielectrics employing spray coated ZnO channels exhibit excellent electron transport characteristics with negligible hysteresis, high on/off current modulation ratio (>10^7) and electron mobility in excess of 12 cm^2 V−1 s−1.

KW - High-k Dielectrics

KW - Lanthanum Aluminate

KW - Transparent Electronics

KW - Thin Film Transistors

M3 - Poster

T2 - EMRS 2015

Y2 - 11 May 2015 through 15 May 2015

ER -