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Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

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Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors. / Bin Esro, Mazran; Mazzocco, Riccardo; Vourlias, G.; Kolosov, Oleg; Milne, W.I. ; Adamopoulos, George.

In: Applied Physics Letters, Vol. 106, 203507, 22.05.2015.

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Bin Esro, Mazran ; Mazzocco, Riccardo ; Vourlias, G. ; Kolosov, Oleg ; Milne, W.I. ; Adamopoulos, George. / Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors. In: Applied Physics Letters. 2015 ; Vol. 106.

Bibtex

@article{62f959f5970d4d209a4f8c3a06356c7d,
title = "Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors",
abstract = "We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (LaxAl1-xOy) grown by spray pyrolysis in ambient atmosphere at 440 C. The structural, electronic, optical, morphological, and electrical properties of the LaxAl1-xOy films and devices as a function ofthe lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As deposited LaAlOy dielectrics exhibit a wide band gap (6.18eV), high dielectric constant (k~16),low roughness (1.9 nm), and very low leakage currents (<3nA/cm2). TFTs employing solution processed LaAlOy gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (10 V), high on/off current modulation ratio of >106, subthreshold swing of 650 mV dec-11, and electron mobility of 12 cm2 V-1 s-1.",
keywords = "Thin Film Transistors, High-k Dielectrics, Spray Pyrolysis, Transparent Electronics ",
author = "{Bin Esro}, Mazran and Riccardo Mazzocco and G. Vourlias and Oleg Kolosov and W.I. Milne and George Adamopoulos",
note = " Evidence of Acceptance is included on Publishers pdf.",
year = "2015",
month = may
day = "22",
doi = "10.1063/1.4921262",
language = "English",
volume = "106",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",

}

RIS

TY - JOUR

T1 - Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

AU - Bin Esro, Mazran

AU - Mazzocco, Riccardo

AU - Vourlias, G.

AU - Kolosov, Oleg

AU - Milne, W.I.

AU - Adamopoulos, George

N1 - Evidence of Acceptance is included on Publishers pdf.

PY - 2015/5/22

Y1 - 2015/5/22

N2 - We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (LaxAl1-xOy) grown by spray pyrolysis in ambient atmosphere at 440 C. The structural, electronic, optical, morphological, and electrical properties of the LaxAl1-xOy films and devices as a function ofthe lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As deposited LaAlOy dielectrics exhibit a wide band gap (6.18eV), high dielectric constant (k~16),low roughness (1.9 nm), and very low leakage currents (<3nA/cm2). TFTs employing solution processed LaAlOy gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (10 V), high on/off current modulation ratio of >106, subthreshold swing of 650 mV dec-11, and electron mobility of 12 cm2 V-1 s-1.

AB - We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (LaxAl1-xOy) grown by spray pyrolysis in ambient atmosphere at 440 C. The structural, electronic, optical, morphological, and electrical properties of the LaxAl1-xOy films and devices as a function ofthe lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As deposited LaAlOy dielectrics exhibit a wide band gap (6.18eV), high dielectric constant (k~16),low roughness (1.9 nm), and very low leakage currents (<3nA/cm2). TFTs employing solution processed LaAlOy gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (10 V), high on/off current modulation ratio of >106, subthreshold swing of 650 mV dec-11, and electron mobility of 12 cm2 V-1 s-1.

KW - Thin Film Transistors

KW - High-k Dielectrics

KW - Spray Pyrolysis

KW - Transparent Electronics

U2 - 10.1063/1.4921262

DO - 10.1063/1.4921262

M3 - Journal article

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

M1 - 203507

ER -