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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors
AU - Bin Esro, Mazran
AU - Mazzocco, Riccardo
AU - Vourlias, G.
AU - Kolosov, Oleg
AU - Milne, W.I.
AU - Adamopoulos, George
N1 - Evidence of Acceptance is included on Publishers pdf.
PY - 2015/5/22
Y1 - 2015/5/22
N2 - We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (LaxAl1-xOy) grown by spray pyrolysis in ambient atmosphere at 440 C. The structural, electronic, optical, morphological, and electrical properties of the LaxAl1-xOy films and devices as a function ofthe lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As deposited LaAlOy dielectrics exhibit a wide band gap (6.18eV), high dielectric constant (k~16),low roughness (1.9 nm), and very low leakage currents (<3nA/cm2). TFTs employing solution processed LaAlOy gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (10 V), high on/off current modulation ratio of >106, subthreshold swing of 650 mV dec-11, and electron mobility of 12 cm2 V-1 s-1.
AB - We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (LaxAl1-xOy) grown by spray pyrolysis in ambient atmosphere at 440 C. The structural, electronic, optical, morphological, and electrical properties of the LaxAl1-xOy films and devices as a function ofthe lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As deposited LaAlOy dielectrics exhibit a wide band gap (6.18eV), high dielectric constant (k~16),low roughness (1.9 nm), and very low leakage currents (<3nA/cm2). TFTs employing solution processed LaAlOy gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (10 V), high on/off current modulation ratio of >106, subthreshold swing of 650 mV dec-11, and electron mobility of 12 cm2 V-1 s-1.
KW - Thin Film Transistors
KW - High-k Dielectrics
KW - Spray Pyrolysis
KW - Transparent Electronics
U2 - 10.1063/1.4921262
DO - 10.1063/1.4921262
M3 - Journal article
VL - 106
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
M1 - 203507
ER -