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Stacking-dependent band gap and quantum transport in trilayer graphene

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Stacking-dependent band gap and quantum transport in trilayer graphene. / Bao, W; Jing, L; Velasco Jr, J et al.
In: Nature Physics, Vol. 7, No. 12, 12.2011, p. 948-952.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Bao, W, Jing, L, Velasco Jr, J, Lee, Y, Liu, G, Tran, D, Standley, B, Aykol, M, Cronin, SB, Smirnov, D, Koshino, M, McCann, E, Bockrath, M & Lau, CN 2011, 'Stacking-dependent band gap and quantum transport in trilayer graphene', Nature Physics, vol. 7, no. 12, pp. 948-952. https://doi.org/10.1038/nphys2103

APA

Bao, W., Jing, L., Velasco Jr, J., Lee, Y., Liu, G., Tran, D., Standley, B., Aykol, M., Cronin, S. B., Smirnov, D., Koshino, M., McCann, E., Bockrath, M., & Lau, C. N. (2011). Stacking-dependent band gap and quantum transport in trilayer graphene. Nature Physics, 7(12), 948-952. https://doi.org/10.1038/nphys2103

Vancouver

Bao W, Jing L, Velasco Jr J, Lee Y, Liu G, Tran D et al. Stacking-dependent band gap and quantum transport in trilayer graphene. Nature Physics. 2011 Dec;7(12):948-952. Epub 2011 Sept 25. doi: 10.1038/nphys2103

Author

Bao, W ; Jing, L ; Velasco Jr, J et al. / Stacking-dependent band gap and quantum transport in trilayer graphene. In: Nature Physics. 2011 ; Vol. 7, No. 12. pp. 948-952.

Bibtex

@article{b30ae3687c4c41b7a1a8b1915460d846,
title = "Stacking-dependent band gap and quantum transport in trilayer graphene",
abstract = "Graphene is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties. In multilayer graphene, stacking order provides an important yet rarely explored degree of freedom for tuning its electronic properties. For instance, Bernal-stacked trilayer graphene (B-TLG) is semi-metallic with a tunable band overlap, and rhombohedral-stacked trilayer graphene (r-TLG) is predicted to be semiconducting with a tunable band gap. These multilayer graphenes are also expected to exhibit rich novel phenomena at low charge densities owing to enhanced electronic interactions and competing symmetries. Here we demonstrate the dramatically different transport properties in TLG with different stacking orders, and the unexpected spontaneous gap opening in charge neutral r-TLG. At the Dirac point, B-TLG remains metallic, whereas r-TLG becomes insulating with an intrinsic interaction-driven gap ~6 meV. In magnetic fields, well-developed quantum Hall (QH) plateaux in r-TLG split into three branches at higher fields. Such splitting is a signature of the Lifshitz transition, a topological change in the Fermi surface, that is found only in r-TLG. Our results underscore the rich interaction-induced phenomena in trilayer graphene with different stacking orders, and its potential towards electronic applications.",
keywords = "graphene",
author = "W Bao and L Jing and {Velasco Jr}, J and Y Lee and G Liu and D Tran and B Standley and M Aykol and Cronin, {S B} and D Smirnov and Mikito Koshino and Edward McCann and M Bockrath and Lau, {C N}",
year = "2011",
month = dec,
doi = "10.1038/nphys2103",
language = "English",
volume = "7",
pages = "948--952",
journal = "Nature Physics",
issn = "1745-2473",
publisher = "Nature Publishing Group",
number = "12",

}

RIS

TY - JOUR

T1 - Stacking-dependent band gap and quantum transport in trilayer graphene

AU - Bao, W

AU - Jing, L

AU - Velasco Jr, J

AU - Lee, Y

AU - Liu, G

AU - Tran, D

AU - Standley, B

AU - Aykol, M

AU - Cronin, S B

AU - Smirnov, D

AU - Koshino, Mikito

AU - McCann, Edward

AU - Bockrath, M

AU - Lau, C N

PY - 2011/12

Y1 - 2011/12

N2 - Graphene is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties. In multilayer graphene, stacking order provides an important yet rarely explored degree of freedom for tuning its electronic properties. For instance, Bernal-stacked trilayer graphene (B-TLG) is semi-metallic with a tunable band overlap, and rhombohedral-stacked trilayer graphene (r-TLG) is predicted to be semiconducting with a tunable band gap. These multilayer graphenes are also expected to exhibit rich novel phenomena at low charge densities owing to enhanced electronic interactions and competing symmetries. Here we demonstrate the dramatically different transport properties in TLG with different stacking orders, and the unexpected spontaneous gap opening in charge neutral r-TLG. At the Dirac point, B-TLG remains metallic, whereas r-TLG becomes insulating with an intrinsic interaction-driven gap ~6 meV. In magnetic fields, well-developed quantum Hall (QH) plateaux in r-TLG split into three branches at higher fields. Such splitting is a signature of the Lifshitz transition, a topological change in the Fermi surface, that is found only in r-TLG. Our results underscore the rich interaction-induced phenomena in trilayer graphene with different stacking orders, and its potential towards electronic applications.

AB - Graphene is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties. In multilayer graphene, stacking order provides an important yet rarely explored degree of freedom for tuning its electronic properties. For instance, Bernal-stacked trilayer graphene (B-TLG) is semi-metallic with a tunable band overlap, and rhombohedral-stacked trilayer graphene (r-TLG) is predicted to be semiconducting with a tunable band gap. These multilayer graphenes are also expected to exhibit rich novel phenomena at low charge densities owing to enhanced electronic interactions and competing symmetries. Here we demonstrate the dramatically different transport properties in TLG with different stacking orders, and the unexpected spontaneous gap opening in charge neutral r-TLG. At the Dirac point, B-TLG remains metallic, whereas r-TLG becomes insulating with an intrinsic interaction-driven gap ~6 meV. In magnetic fields, well-developed quantum Hall (QH) plateaux in r-TLG split into three branches at higher fields. Such splitting is a signature of the Lifshitz transition, a topological change in the Fermi surface, that is found only in r-TLG. Our results underscore the rich interaction-induced phenomena in trilayer graphene with different stacking orders, and its potential towards electronic applications.

KW - graphene

UR - http://www.scopus.com/inward/record.url?scp=80053171890&partnerID=8YFLogxK

U2 - 10.1038/nphys2103

DO - 10.1038/nphys2103

M3 - Journal article

VL - 7

SP - 948

EP - 952

JO - Nature Physics

JF - Nature Physics

SN - 1745-2473

IS - 12

ER -