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Strain enhancement during annealing of GaAsN alloys.

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Strain enhancement during annealing of GaAsN alloys. / Zhuang, Q. D.; Krier, A.; Stanley, C. R.
In: Journal of Applied Physics, Vol. 101, No. 10, 15.05.2007, p. 103536.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Zhuang, QD, Krier, A & Stanley, CR 2007, 'Strain enhancement during annealing of GaAsN alloys.', Journal of Applied Physics, vol. 101, no. 10, pp. 103536. https://doi.org/10.1063/1.2717603

APA

Zhuang, Q. D., Krier, A., & Stanley, C. R. (2007). Strain enhancement during annealing of GaAsN alloys. Journal of Applied Physics, 101(10), 103536. https://doi.org/10.1063/1.2717603

Vancouver

Zhuang QD, Krier A, Stanley CR. Strain enhancement during annealing of GaAsN alloys. Journal of Applied Physics. 2007 May 15;101(10):103536. doi: 10.1063/1.2717603

Author

Zhuang, Q. D. ; Krier, A. ; Stanley, C. R. / Strain enhancement during annealing of GaAsN alloys. In: Journal of Applied Physics. 2007 ; Vol. 101, No. 10. pp. 103536.

Bibtex

@article{7967e2e9586d4c959d583283b10e8e07,
title = "Strain enhancement during annealing of GaAsN alloys.",
abstract = "We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural properties of GaAsN alloys using photoluminescence (PL) and double-crystal x-ray diffraction. We observe a significant anomalous strain enhancement during RTA and a blueshift of the PL peak energy accompanied by a reduction in the emission linewidth. The PL features are attributed to an improvement in the homogeneity of the alloy, and the strain enhancement reflects a change in N-related complexes during annealing. Based on a defect model, an interstitial nitrogen concentration of 1.8×1019 cm−3 is deduced prior to annealing.",
author = "Zhuang, {Q. D.} and A. Krier and Stanley, {C. R.}",
note = "Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 101 (10), 2007 and may be found at http://link.aip.org/link/?JAPIAU/101/103536/1",
year = "2007",
month = may,
day = "15",
doi = "10.1063/1.2717603",
language = "English",
volume = "101",
pages = "103536",
journal = "Journal of Applied Physics",
issn = "1089-7550",
publisher = "AMER INST PHYSICS",
number = "10",

}

RIS

TY - JOUR

T1 - Strain enhancement during annealing of GaAsN alloys.

AU - Zhuang, Q. D.

AU - Krier, A.

AU - Stanley, C. R.

N1 - Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 101 (10), 2007 and may be found at http://link.aip.org/link/?JAPIAU/101/103536/1

PY - 2007/5/15

Y1 - 2007/5/15

N2 - We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural properties of GaAsN alloys using photoluminescence (PL) and double-crystal x-ray diffraction. We observe a significant anomalous strain enhancement during RTA and a blueshift of the PL peak energy accompanied by a reduction in the emission linewidth. The PL features are attributed to an improvement in the homogeneity of the alloy, and the strain enhancement reflects a change in N-related complexes during annealing. Based on a defect model, an interstitial nitrogen concentration of 1.8×1019 cm−3 is deduced prior to annealing.

AB - We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural properties of GaAsN alloys using photoluminescence (PL) and double-crystal x-ray diffraction. We observe a significant anomalous strain enhancement during RTA and a blueshift of the PL peak energy accompanied by a reduction in the emission linewidth. The PL features are attributed to an improvement in the homogeneity of the alloy, and the strain enhancement reflects a change in N-related complexes during annealing. Based on a defect model, an interstitial nitrogen concentration of 1.8×1019 cm−3 is deduced prior to annealing.

U2 - 10.1063/1.2717603

DO - 10.1063/1.2717603

M3 - Journal article

VL - 101

SP - 103536

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 1089-7550

IS - 10

ER -