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Structural and functional analysis of nanopillar spin electronic devices fabricated by 3D focused ion beam lithography

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Structural and functional analysis of nanopillar spin electronic devices fabricated by 3D focused ion beam lithography. / Wu, M. C.; Aziz, A.; Witt, J. D. S. et al.
In: Nanotechnology, Vol. 19, No. 48, 485305, 03.12.2008.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Wu, MC, Aziz, A, Witt, JDS, Hickey, MC, Ali, M, Marrows, CH, Hickey, BJ & Blamire, MG 2008, 'Structural and functional analysis of nanopillar spin electronic devices fabricated by 3D focused ion beam lithography', Nanotechnology, vol. 19, no. 48, 485305. https://doi.org/10.1088/0957-4484/19/48/485305

APA

Wu, M. C., Aziz, A., Witt, J. D. S., Hickey, M. C., Ali, M., Marrows, C. H., Hickey, B. J., & Blamire, M. G. (2008). Structural and functional analysis of nanopillar spin electronic devices fabricated by 3D focused ion beam lithography. Nanotechnology, 19(48), Article 485305. https://doi.org/10.1088/0957-4484/19/48/485305

Vancouver

Wu MC, Aziz A, Witt JDS, Hickey MC, Ali M, Marrows CH et al. Structural and functional analysis of nanopillar spin electronic devices fabricated by 3D focused ion beam lithography. Nanotechnology. 2008 Dec 3;19(48):485305. doi: 10.1088/0957-4484/19/48/485305

Author

Wu, M. C. ; Aziz, A. ; Witt, J. D. S. et al. / Structural and functional analysis of nanopillar spin electronic devices fabricated by 3D focused ion beam lithography. In: Nanotechnology. 2008 ; Vol. 19, No. 48.

Bibtex

@article{21f7664c875d4f6ab3e81911d3a073d5,
title = "Structural and functional analysis of nanopillar spin electronic devices fabricated by 3D focused ion beam lithography",
abstract = "We discuss the fabrication of nanopillar spin electronic devices from metal multilayered heterostructures, utilizing a novel three-dimensional focused ion beam lithography process. Finite element simulation was performed to optimize the geometry of the nanopillar device and to demonstrate that current flow is perpendicular to the plane within the active region of the device. Clear zero-field current induced magnetization switching is observed in our nanopillar devices at room temperature.",
keywords = "DOTS, ARRAYS",
author = "Wu, {M. C.} and A. Aziz and Witt, {J. D. S.} and Hickey, {M. C.} and M. Ali and Marrows, {C. H.} and Hickey, {B. J.} and Blamire, {M. G.}",
year = "2008",
month = dec,
day = "3",
doi = "10.1088/0957-4484/19/48/485305",
language = "English",
volume = "19",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "48",

}

RIS

TY - JOUR

T1 - Structural and functional analysis of nanopillar spin electronic devices fabricated by 3D focused ion beam lithography

AU - Wu, M. C.

AU - Aziz, A.

AU - Witt, J. D. S.

AU - Hickey, M. C.

AU - Ali, M.

AU - Marrows, C. H.

AU - Hickey, B. J.

AU - Blamire, M. G.

PY - 2008/12/3

Y1 - 2008/12/3

N2 - We discuss the fabrication of nanopillar spin electronic devices from metal multilayered heterostructures, utilizing a novel three-dimensional focused ion beam lithography process. Finite element simulation was performed to optimize the geometry of the nanopillar device and to demonstrate that current flow is perpendicular to the plane within the active region of the device. Clear zero-field current induced magnetization switching is observed in our nanopillar devices at room temperature.

AB - We discuss the fabrication of nanopillar spin electronic devices from metal multilayered heterostructures, utilizing a novel three-dimensional focused ion beam lithography process. Finite element simulation was performed to optimize the geometry of the nanopillar device and to demonstrate that current flow is perpendicular to the plane within the active region of the device. Clear zero-field current induced magnetization switching is observed in our nanopillar devices at room temperature.

KW - DOTS

KW - ARRAYS

U2 - 10.1088/0957-4484/19/48/485305

DO - 10.1088/0957-4484/19/48/485305

M3 - Journal article

VL - 19

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 48

M1 - 485305

ER -