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Licence: CC BY
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Structural, optical and electrostatic properties of single and fewlayers MoS2
T2 - effect of substrate
AU - Robinson, Benjamin
AU - Giusca, Cristina
AU - Gonzalez, Yurema
AU - Kay, Nicholas
AU - Kazakova, Olga
AU - Kolosov, Oleg
N1 - Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
PY - 2015/2/20
Y1 - 2015/2/20
N2 - We have decoupled the intrinsic electrostatic effects arising in monolayer and few-layer MoS2 from those influenced by the flake-substrate interaction. Using ultrasonic force microscopy nanomechanical mapping, we identify the change from supported to suspended flake regions on a trenched substrate. These regions are correlated with the surface potential as measured by scanning Kelvin probe microscopy. Relative to the supported region, we observe an increase in surface potential contrast due to suppressed charge transfer for the suspended monolayer. Using Raman spectroscopy we observe a red shift of the E12g mode for monolayer MoS2 deposited on Si, consistent with a more strained MoS2 on the Si substrate compared to the Au substrate.
AB - We have decoupled the intrinsic electrostatic effects arising in monolayer and few-layer MoS2 from those influenced by the flake-substrate interaction. Using ultrasonic force microscopy nanomechanical mapping, we identify the change from supported to suspended flake regions on a trenched substrate. These regions are correlated with the surface potential as measured by scanning Kelvin probe microscopy. Relative to the supported region, we observe an increase in surface potential contrast due to suppressed charge transfer for the suspended monolayer. Using Raman spectroscopy we observe a red shift of the E12g mode for monolayer MoS2 deposited on Si, consistent with a more strained MoS2 on the Si substrate compared to the Au substrate.
U2 - 10.1088/2053-1583/2/1/015005
DO - 10.1088/2053-1583/2/1/015005
M3 - Journal article
VL - 2
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
IS - 1
M1 - 015005
ER -