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Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection. / Gilberston, Adam; Benstock, D.; Fearn, Mike et al.
In: Applied Physics Letters, Vol. 98, No. 6, 062106, 10.02.2011.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Gilberston, A, Benstock, D, Fearn, M, Kormanyos, A, Ladak, S, Emeny, M, Lambert, C, Ashley, T, Solin, S & Cohen, L 2011, 'Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection', Applied Physics Letters, vol. 98, no. 6, 062106. https://doi.org/10.1063/1.3554427

APA

Gilberston, A., Benstock, D., Fearn, M., Kormanyos, A., Ladak, S., Emeny, M., Lambert, C., Ashley, T., Solin, S., & Cohen, L. (2011). Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection. Applied Physics Letters, 98(6), Article 062106. https://doi.org/10.1063/1.3554427

Vancouver

Gilberston A, Benstock D, Fearn M, Kormanyos A, Ladak S, Emeny M et al. Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection. Applied Physics Letters. 2011 Feb 10;98(6):062106. doi: 10.1063/1.3554427

Author

Gilberston, Adam ; Benstock, D. ; Fearn, Mike et al. / Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection. In: Applied Physics Letters. 2011 ; Vol. 98, No. 6.

Bibtex

@article{623d5b8a67274e72a46fecd8df451fc8,
title = "Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection",
abstract = "We report the magnetic field detection properties of ballistic sensors utilizing the negative bend resistance of InSb/In1−xAlxSb quantum well cross junctions as a function of temperature and geometric size. We demonstrate that the maximum responsivity to magnetic field and its linearity increase as the critical device dimension is reduced. This observation deviates from the predictions of the classical billiard ball model unless significant diffuse boundary scattering is included. The smallest device studied has an active sensor area of 35×35 nm2, with a maximum responsivity of 20 kΩ/T, and a noise-equivalent field of 0.87 μT/ at 100 K.",
author = "Adam Gilberston and D. Benstock and Mike Fearn and Andor Kormanyos and S. Ladak and M. Emeny and Colin Lambert and T. Ashley and Stuart Solin and Lesley Cohen",
note = "{\textcopyright} 2011 American Institute of Physics",
year = "2011",
month = feb,
day = "10",
doi = "10.1063/1.3554427",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "6",

}

RIS

TY - JOUR

T1 - Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection

AU - Gilberston, Adam

AU - Benstock, D.

AU - Fearn, Mike

AU - Kormanyos, Andor

AU - Ladak, S.

AU - Emeny, M.

AU - Lambert, Colin

AU - Ashley, T.

AU - Solin, Stuart

AU - Cohen, Lesley

N1 - © 2011 American Institute of Physics

PY - 2011/2/10

Y1 - 2011/2/10

N2 - We report the magnetic field detection properties of ballistic sensors utilizing the negative bend resistance of InSb/In1−xAlxSb quantum well cross junctions as a function of temperature and geometric size. We demonstrate that the maximum responsivity to magnetic field and its linearity increase as the critical device dimension is reduced. This observation deviates from the predictions of the classical billiard ball model unless significant diffuse boundary scattering is included. The smallest device studied has an active sensor area of 35×35 nm2, with a maximum responsivity of 20 kΩ/T, and a noise-equivalent field of 0.87 μT/ at 100 K.

AB - We report the magnetic field detection properties of ballistic sensors utilizing the negative bend resistance of InSb/In1−xAlxSb quantum well cross junctions as a function of temperature and geometric size. We demonstrate that the maximum responsivity to magnetic field and its linearity increase as the critical device dimension is reduced. This observation deviates from the predictions of the classical billiard ball model unless significant diffuse boundary scattering is included. The smallest device studied has an active sensor area of 35×35 nm2, with a maximum responsivity of 20 kΩ/T, and a noise-equivalent field of 0.87 μT/ at 100 K.

U2 - 10.1063/1.3554427

DO - 10.1063/1.3554427

M3 - Journal article

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 6

M1 - 062106

ER -