Home > Research > Publications & Outputs > Suppression of the surface “dead region” for fa...

Electronic data

  • GaInAsSb_Cell_for_SEMSC

    Rights statement: This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 163, 2017 DOI: 10.1016/j.solmat.2017.01.019

    Accepted author manuscript, 946 KB, PDF document

    Available under license: CC BY-NC-ND: Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License

Links

Text available via DOI:

View graph of relations

Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

Research output: Contribution to journalJournal article

Published
Close
<mark>Journal publication date</mark>04/2017
<mark>Journal</mark>Solar Energy Materials and Solar Cells
Volume163
Number of pages7
Pages (from-to)263-269
Publication statusPublished
Early online date3/02/17
Original languageEnglish

Abstract

Abstract Zn diffusion processes in n-Ga0.78In0.22As0.2Sb0.8 epitaxial films are studied using different diffusion sources, a series of the Zn profiles with single and double humps are obtained. The group V-atoms (As and Sb) are found to have little effect on suppressing the surface “dead region”. The Ga and In atoms have entirely different effect on diffusion although they are both group III-atoms. The “dead region” is suppressed completely under Ga-rich conditions, while the suppression will not occur under In-rich conditions. The GaInAsSb cells are fabricated under pure Zn and Ga-rich conditions. An electrical heating thermophotovoltaic system is fabricated for cell testing. Under the radiation from 1055 °C-SiN ceramics emitter, the output power density of the GaInAsSb cell obtained under Ga-rich condition is much larger than that of the cell obtained under pure Zn condition, which demonstrated that the GaInAsSb cells can be fabricated without precise etching under Ga-rich conditions.

Bibliographic note

This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 163, 2017 DOI: 10.1016/j.solmat.2017.01.019