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Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes. / Ker, Pin Jern; Marshall, Andrew R. J.; Krysa, Andrey B. et al.
In: IEEE Journal of Quantum Electronics, Vol. 47, No. 8, 08.2011, p. 1123-1128.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Ker, PJ, Marshall, ARJ, Krysa, AB, David, JPR & Tan, CH 2011, 'Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes', IEEE Journal of Quantum Electronics, vol. 47, no. 8, pp. 1123-1128. https://doi.org/10.1109/JQE.2011.2159194

APA

Ker, P. J., Marshall, A. R. J., Krysa, A. B., David, J. P. R., & Tan, C. H. (2011). Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes. IEEE Journal of Quantum Electronics, 47(8), 1123-1128. https://doi.org/10.1109/JQE.2011.2159194

Vancouver

Ker PJ, Marshall ARJ, Krysa AB, David JPR, Tan CH. Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes. IEEE Journal of Quantum Electronics. 2011 Aug;47(8):1123-1128. doi: 10.1109/JQE.2011.2159194

Author

Ker, Pin Jern ; Marshall, Andrew R. J. ; Krysa, Andrey B. et al. / Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes. In: IEEE Journal of Quantum Electronics. 2011 ; Vol. 47, No. 8. pp. 1123-1128.

Bibtex

@article{b977fb4c162147e5bc2834bff812b3b1,
title = "Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes",
abstract = "Measurement and analysis of the temperature dependence of bulk and surface leakage currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At unity gain, SU-8 passivated InAs photodiodes have low dark current densities of 100 mA/cm(2) at 290 K and 150 nA/cm(2) at 77 K. An avalanche multiplication factor of 25 was measured at 13 V and 19.5 V at 290 K and 77 K, respectively. The photodiodes exhibit dynamic resistance-area products, calculated at 0.1 V of 34 Omega-cm(2) at 290 K and 910 M Omega-cm(2) at 77 K. Our analysis showed that between the temperatures of 200 K and 290 K, the bulk leakage current is proportional to n(i)(2) whereas the surface leakage current is proportional to n(i) from 77 K to 290 K, where n(i) is the intrinsic carrier concentration. The activation energies deduced were 0.36 eV and 0.18 eV suggesting diffusion dominated bulk current and generation and recombination dominated surface current.",
keywords = "Avalanche photodiode , InAs , impact ionization, leakage current",
author = "Ker, {Pin Jern} and Marshall, {Andrew R. J.} and Krysa, {Andrey B.} and David, {John P. R.} and Tan, {Chee Hing}",
year = "2011",
month = aug,
doi = "10.1109/JQE.2011.2159194",
language = "English",
volume = "47",
pages = "1123--1128",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

RIS

TY - JOUR

T1 - Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes

AU - Ker, Pin Jern

AU - Marshall, Andrew R. J.

AU - Krysa, Andrey B.

AU - David, John P. R.

AU - Tan, Chee Hing

PY - 2011/8

Y1 - 2011/8

N2 - Measurement and analysis of the temperature dependence of bulk and surface leakage currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At unity gain, SU-8 passivated InAs photodiodes have low dark current densities of 100 mA/cm(2) at 290 K and 150 nA/cm(2) at 77 K. An avalanche multiplication factor of 25 was measured at 13 V and 19.5 V at 290 K and 77 K, respectively. The photodiodes exhibit dynamic resistance-area products, calculated at 0.1 V of 34 Omega-cm(2) at 290 K and 910 M Omega-cm(2) at 77 K. Our analysis showed that between the temperatures of 200 K and 290 K, the bulk leakage current is proportional to n(i)(2) whereas the surface leakage current is proportional to n(i) from 77 K to 290 K, where n(i) is the intrinsic carrier concentration. The activation energies deduced were 0.36 eV and 0.18 eV suggesting diffusion dominated bulk current and generation and recombination dominated surface current.

AB - Measurement and analysis of the temperature dependence of bulk and surface leakage currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At unity gain, SU-8 passivated InAs photodiodes have low dark current densities of 100 mA/cm(2) at 290 K and 150 nA/cm(2) at 77 K. An avalanche multiplication factor of 25 was measured at 13 V and 19.5 V at 290 K and 77 K, respectively. The photodiodes exhibit dynamic resistance-area products, calculated at 0.1 V of 34 Omega-cm(2) at 290 K and 910 M Omega-cm(2) at 77 K. Our analysis showed that between the temperatures of 200 K and 290 K, the bulk leakage current is proportional to n(i)(2) whereas the surface leakage current is proportional to n(i) from 77 K to 290 K, where n(i) is the intrinsic carrier concentration. The activation energies deduced were 0.36 eV and 0.18 eV suggesting diffusion dominated bulk current and generation and recombination dominated surface current.

KW - Avalanche photodiode

KW - InAs

KW - impact ionization

KW - leakage current

U2 - 10.1109/JQE.2011.2159194

DO - 10.1109/JQE.2011.2159194

M3 - Journal article

VL - 47

SP - 1123

EP - 1128

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 8

ER -