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Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

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Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes. / Benoit, M.; Braccini, S.; Casse, G.; Chen, H.; Di Bello, F. A.; Ferrere, D.; Golling, T. ; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Muenstermann, Daniel Matthias Alfred; Nessi, M.; Okawa, H.; Perić, I.; Rimoldi, M.; Ristic, B; Vicente Barreto Pinto, M. ; Vossebeld, J.; Weber, M.; Weston, T.; Wu, W.; Xu, L; Zaffaroni, E.

In: Journal of Instrumentation, Vol. 13, P02011, 08.02.2018.

Research output: Contribution to journalJournal article

Harvard

Benoit, M, Braccini, S, Casse, G, Chen, H, Di Bello, FA, Ferrere, D, Golling, T, Gonzalez-Sevilla, S, Iacobucci, G, Kiehn, M, Lanni, F, Liu, H, Meng, L, Merlassino, C, Miucci, A, Muenstermann, DMA, Nessi, M, Okawa, H, Perić, I, Rimoldi, M, Ristic, B, Vicente Barreto Pinto, M, Vossebeld, J, Weber, M, Weston, T, Wu, W, Xu, L & Zaffaroni, E 2018, 'Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes' Journal of Instrumentation, vol 13, P02011. DOI: 10.1088/1748-0221/13/02/P02011

APA

Benoit, M., Braccini, S., Casse, G., Chen, H., Di Bello, F. A., Ferrere, D., ... Zaffaroni, E. (2018). Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes. Journal of Instrumentation, 13, [P02011]. DOI: 10.1088/1748-0221/13/02/P02011

Vancouver

Benoit M, Braccini S, Casse G, Chen H, Di Bello FA, Ferrere D et al. Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes. Journal of Instrumentation. 2018 Feb 8;13. P02011. Available from, DOI: 10.1088/1748-0221/13/02/P02011

Author

Benoit, M.; Braccini, S.; Casse, G.; Chen, H.; Di Bello, F. A.; Ferrere, D.; Golling, T. ; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Muenstermann, Daniel Matthias Alfred; Nessi, M.; Okawa, H.; Perić, I.; Rimoldi, M.; Ristic, B; Vicente Barreto Pinto, M. ; Vossebeld, J.; Weber, M.; Weston, T.; Wu, W.; Xu, L; Zaffaroni, E. / Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes.

In: Journal of Instrumentation, Vol. 13, P02011, 08.02.2018.

Research output: Contribution to journalJournal article

Bibtex

@article{bd2aac157ce64cc38383563015d4698e,
title = "Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes",
abstract = "HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1× 1014 and 5× 1015 1−MeV− neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1× 1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.",
author = "M. Benoit and S. Braccini and G. Casse and H. Chen and {Di Bello}, {F. A.} and D. Ferrere and T. Golling and S. Gonzalez-Sevilla and G. Iacobucci and M. Kiehn and F. Lanni and H. Liu and L. Meng and C. Merlassino and A. Miucci and Muenstermann, {Daniel Matthias Alfred} and M. Nessi and H. Okawa and I. Perić and M. Rimoldi and B Ristic and {Vicente Barreto Pinto}, M. and J. Vossebeld and M. Weber and T. Weston and W. Wu and L Xu and E. Zaffaroni",
year = "2018",
month = "2",
doi = "10.1088/1748-0221/13/02/P02011",
volume = "13",
journal = "Journal of Instrumentation",
issn = "1748-0221",
publisher = "IOP Publishing Ltd.",

}

RIS

TY - JOUR

T1 - Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

AU - Benoit,M.

AU - Braccini,S.

AU - Casse,G.

AU - Chen,H.

AU - Di Bello,F. A.

AU - Ferrere,D.

AU - Golling,T.

AU - Gonzalez-Sevilla,S.

AU - Iacobucci,G.

AU - Kiehn,M.

AU - Lanni,F.

AU - Liu,H.

AU - Meng,L.

AU - Merlassino,C.

AU - Miucci,A.

AU - Muenstermann,Daniel Matthias Alfred

AU - Nessi,M.

AU - Okawa,H.

AU - Perić,I.

AU - Rimoldi,M.

AU - Ristic,B

AU - Vicente Barreto Pinto,M.

AU - Vossebeld,J.

AU - Weber,M.

AU - Weston,T.

AU - Wu,W.

AU - Xu,L

AU - Zaffaroni,E.

PY - 2018/2/8

Y1 - 2018/2/8

N2 - HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1× 1014 and 5× 1015 1−MeV− neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1× 1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

AB - HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1× 1014 and 5× 1015 1−MeV− neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1× 1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

U2 - 10.1088/1748-0221/13/02/P02011

DO - 10.1088/1748-0221/13/02/P02011

M3 - Journal article

VL - 13

JO - Journal of Instrumentation

T2 - Journal of Instrumentation

JF - Journal of Instrumentation

SN - 1748-0221

M1 - P02011

ER -