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The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .

Research output: Contribution to journalJournal article

<mark>Journal publication date</mark>03/2004
<mark>Journal</mark>Semiconductor Science and Technology
Issue number3
Number of pages5
Pages (from-to)480-484
<mark>Original language</mark>English


It has been observed that current crowding and the position of the ohmic contact can have a significant influence on the electroluminescence of InAs-based mid-infrared light-emitting diodes. The asymmetry in the contact position leads to the appearance of highly directional light emission from the mesa edge and a very strong spectral current tuning behaviour, with a tuning rate as high as 1.0 nm mA(-1) over a tuning range of 180 nm. This effect is due to the current crowding near the edge of the mesa resulting in localized optical gain near the mesa boundary.