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The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. . / Monakhov, A.; Krier, A.; Sherstnev, V. V.
In: Semiconductor Science and Technology, Vol. 19, No. 3, 03.2004, p. 480-484.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Monakhov, A, Krier, A & Sherstnev, VV 2004, 'The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .', Semiconductor Science and Technology, vol. 19, no. 3, pp. 480-484. https://doi.org/10.1088/0268-1242/19/3/034

APA

Monakhov, A., Krier, A., & Sherstnev, V. V. (2004). The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. . Semiconductor Science and Technology, 19(3), 480-484. https://doi.org/10.1088/0268-1242/19/3/034

Vancouver

Monakhov A, Krier A, Sherstnev VV. The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. . Semiconductor Science and Technology. 2004 Mar;19(3):480-484. doi: 10.1088/0268-1242/19/3/034

Author

Monakhov, A. ; Krier, A. ; Sherstnev, V. V. / The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. . In: Semiconductor Science and Technology. 2004 ; Vol. 19, No. 3. pp. 480-484.

Bibtex

@article{38b3b9c6f9f740d2866b64db04ea9b51,
title = "The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .",
abstract = "It has been observed that current crowding and the position of the ohmic contact can have a significant influence on the electroluminescence of InAs-based mid-infrared light-emitting diodes. The asymmetry in the contact position leads to the appearance of highly directional light emission from the mesa edge and a very strong spectral current tuning behaviour, with a tuning rate as high as 1.0 nm mA(-1) over a tuning range of 180 nm. This effect is due to the current crowding near the edge of the mesa resulting in localized optical gain near the mesa boundary.",
author = "A. Monakhov and A. Krier and Sherstnev, {V. V.}",
year = "2004",
month = mar,
doi = "10.1088/0268-1242/19/3/034",
language = "English",
volume = "19",
pages = "480--484",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "3",

}

RIS

TY - JOUR

T1 - The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .

AU - Monakhov, A.

AU - Krier, A.

AU - Sherstnev, V. V.

PY - 2004/3

Y1 - 2004/3

N2 - It has been observed that current crowding and the position of the ohmic contact can have a significant influence on the electroluminescence of InAs-based mid-infrared light-emitting diodes. The asymmetry in the contact position leads to the appearance of highly directional light emission from the mesa edge and a very strong spectral current tuning behaviour, with a tuning rate as high as 1.0 nm mA(-1) over a tuning range of 180 nm. This effect is due to the current crowding near the edge of the mesa resulting in localized optical gain near the mesa boundary.

AB - It has been observed that current crowding and the position of the ohmic contact can have a significant influence on the electroluminescence of InAs-based mid-infrared light-emitting diodes. The asymmetry in the contact position leads to the appearance of highly directional light emission from the mesa edge and a very strong spectral current tuning behaviour, with a tuning rate as high as 1.0 nm mA(-1) over a tuning range of 180 nm. This effect is due to the current crowding near the edge of the mesa resulting in localized optical gain near the mesa boundary.

U2 - 10.1088/0268-1242/19/3/034

DO - 10.1088/0268-1242/19/3/034

M3 - Journal article

VL - 19

SP - 480

EP - 484

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 3

ER -