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The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

Research output: Contribution to journalJournal article


  • S. A. Choulis
  • A. Andreev
  • M. Merrick
  • S. Jin
  • D. G. Clarke
  • B. N. Murdin
  • A. R. Adams
  • A. Krier
  • V. V. Sherstnev
Journal publication date1/02/2003
Journalphysica status solidi (b)
Journal number2
Number of pages5
Original languageEnglish


The spontaneous emission of 3.3 mum light emitting diodes (LEDs) and lasers based on InAs alloys were studied as a function of hydrostatic pressure. An increase in light output with increasing pressure has been observed, with a general comparison of the performances of type I and type 11 structures given in terms of the radiative and non-radiative processes involved. The experimental results provide evidence that the so-called CHSH Auger process is insignificant in these devices. However, Auger recombination mechanisms are still shown to dominate the response of these type 11 LEDs in contrast to type I lasers where competing radiative processes appear more significant.