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The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

Research output: Contribution to journalJournal article


  • S. A. Choulis
  • A. Andreev
  • M. Merrick
  • S. Jin
  • D. G. Clarke
  • B. N. Murdin
  • A. R. Adams
  • A. Krier
  • V. V. Sherstnev
Journal publication date1/02/2003
Journalphysica status solidi (b)
Number of pages5
Original languageEnglish


The spontaneous emission of 3.3 mum light emitting diodes (LEDs) and lasers based on InAs alloys were studied as a function of hydrostatic pressure. An increase in light output with increasing pressure has been observed, with a general comparison of the performances of type I and type 11 structures given in terms of the radiative and non-radiative processes involved. The experimental results provide evidence that the so-called CHSH Auger process is insignificant in these devices. However, Auger recombination mechanisms are still shown to dominate the response of these type 11 LEDs in contrast to type I lasers where competing radiative processes appear more significant.