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The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

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The effect of pressure on the radiative efficiency of InAs based light emitting diodes. . / Choulis, S. A.; Andreev, A.; Merrick, M. et al.
In: physica status solidi (b), Vol. 235, No. 2, 01.02.2003, p. 312-316.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Choulis, SA, Andreev, A, Merrick, M, Jin, S, Clarke, DG, Murdin, BN, Adams, AR, Krier, A & Sherstnev, VV 2003, 'The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .', physica status solidi (b), vol. 235, no. 2, pp. 312-316. https://doi.org/10.1002/pssb.200301575

APA

Choulis, S. A., Andreev, A., Merrick, M., Jin, S., Clarke, D. G., Murdin, B. N., Adams, A. R., Krier, A., & Sherstnev, V. V. (2003). The effect of pressure on the radiative efficiency of InAs based light emitting diodes. . physica status solidi (b), 235(2), 312-316. https://doi.org/10.1002/pssb.200301575

Vancouver

Choulis SA, Andreev A, Merrick M, Jin S, Clarke DG, Murdin BN et al. The effect of pressure on the radiative efficiency of InAs based light emitting diodes. . physica status solidi (b). 2003 Feb 1;235(2):312-316. doi: 10.1002/pssb.200301575

Author

Choulis, S. A. ; Andreev, A. ; Merrick, M. et al. / The effect of pressure on the radiative efficiency of InAs based light emitting diodes. . In: physica status solidi (b). 2003 ; Vol. 235, No. 2. pp. 312-316.

Bibtex

@article{196152968329455991f7bc007eb4c9b1,
title = "The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .",
abstract = "The spontaneous emission of 3.3 mum light emitting diodes (LEDs) and lasers based on InAs alloys were studied as a function of hydrostatic pressure. An increase in light output with increasing pressure has been observed, with a general comparison of the performances of type I and type 11 structures given in terms of the radiative and non-radiative processes involved. The experimental results provide evidence that the so-called CHSH Auger process is insignificant in these devices. However, Auger recombination mechanisms are still shown to dominate the response of these type 11 LEDs in contrast to type I lasers where competing radiative processes appear more significant.",
keywords = "42.55.Px • 42.60.Lh • 78.60.Fi",
author = "Choulis, {S. A.} and A. Andreev and M. Merrick and S. Jin and Clarke, {D. G.} and Murdin, {B. N.} and Adams, {A. R.} and A. Krier and Sherstnev, {V. V.}",
year = "2003",
month = feb,
day = "1",
doi = "10.1002/pssb.200301575",
language = "English",
volume = "235",
pages = "312--316",
journal = "physica status solidi (b)",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "2",

}

RIS

TY - JOUR

T1 - The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

AU - Choulis, S. A.

AU - Andreev, A.

AU - Merrick, M.

AU - Jin, S.

AU - Clarke, D. G.

AU - Murdin, B. N.

AU - Adams, A. R.

AU - Krier, A.

AU - Sherstnev, V. V.

PY - 2003/2/1

Y1 - 2003/2/1

N2 - The spontaneous emission of 3.3 mum light emitting diodes (LEDs) and lasers based on InAs alloys were studied as a function of hydrostatic pressure. An increase in light output with increasing pressure has been observed, with a general comparison of the performances of type I and type 11 structures given in terms of the radiative and non-radiative processes involved. The experimental results provide evidence that the so-called CHSH Auger process is insignificant in these devices. However, Auger recombination mechanisms are still shown to dominate the response of these type 11 LEDs in contrast to type I lasers where competing radiative processes appear more significant.

AB - The spontaneous emission of 3.3 mum light emitting diodes (LEDs) and lasers based on InAs alloys were studied as a function of hydrostatic pressure. An increase in light output with increasing pressure has been observed, with a general comparison of the performances of type I and type 11 structures given in terms of the radiative and non-radiative processes involved. The experimental results provide evidence that the so-called CHSH Auger process is insignificant in these devices. However, Auger recombination mechanisms are still shown to dominate the response of these type 11 LEDs in contrast to type I lasers where competing radiative processes appear more significant.

KW - 42.55.Px • 42.60.Lh • 78.60.Fi

U2 - 10.1002/pssb.200301575

DO - 10.1002/pssb.200301575

M3 - Journal article

VL - 235

SP - 312

EP - 316

JO - physica status solidi (b)

JF - physica status solidi (b)

SN - 0370-1972

IS - 2

ER -