The focusing of electric current by a single p-n junction in graphene is theoretically predicted. Precise focusing may be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values. This finding may be useful for the engineering of electronic lenses and focused beam splitters using gate-controlled n-p-n junctions in graphene-based transistors.
Our prediction of focusing of electrons by a np junction in graphene (by tuning carrier density on the two sides of the junction to equal values) leading to a possibility to engineer electronic lenses and focused beam splitters stimulated development of gate-controlled junctions in graphene-based transistors at Stanford, MPI-Stuttgart, Harvard. RAE_import_type : Journal article RAE_uoa_type : Physics