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The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions.

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The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions. / Cheianov, Vadim V.; Altshuler, B. L.; Falko, Vladimir I.
In: Science, Vol. 315, No. 5816, 02.03.2007, p. 1252-1255.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Cheianov VV, Altshuler BL, Falko VI. The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions. Science. 2007 Mar 2;315(5816):1252-1255. doi: 10.1126/science.1138020

Author

Cheianov, Vadim V. ; Altshuler, B. L. ; Falko, Vladimir I. / The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions. In: Science. 2007 ; Vol. 315, No. 5816. pp. 1252-1255.

Bibtex

@article{7e49caff12884d5eaeee5bef866d8e24,
title = "The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions.",
abstract = "The focusing of electric current by a single p-n junction in graphene is theoretically predicted. Precise focusing may be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values. This finding may be useful for the engineering of electronic lenses and focused beam splitters using gate-controlled n-p-n junctions in graphene-based transistors.",
author = "Cheianov, {Vadim V.} and Altshuler, {B. L.} and Falko, {Vladimir I.}",
note = "Our prediction of focusing of electrons by a np junction in graphene (by tuning carrier density on the two sides of the junction to equal values) leading to a possibility to engineer electronic lenses and focused beam splitters stimulated development of gate-controlled junctions in graphene-based transistors at Stanford, MPI-Stuttgart, Harvard. RAE_import_type : Journal article RAE_uoa_type : Physics",
year = "2007",
month = mar,
day = "2",
doi = "10.1126/science.1138020",
language = "English",
volume = "315",
pages = "1252--1255",
journal = "Science",
issn = "0036-8075",
publisher = "American Association for the Advancement of Science",
number = "5816",

}

RIS

TY - JOUR

T1 - The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions.

AU - Cheianov, Vadim V.

AU - Altshuler, B. L.

AU - Falko, Vladimir I.

N1 - Our prediction of focusing of electrons by a np junction in graphene (by tuning carrier density on the two sides of the junction to equal values) leading to a possibility to engineer electronic lenses and focused beam splitters stimulated development of gate-controlled junctions in graphene-based transistors at Stanford, MPI-Stuttgart, Harvard. RAE_import_type : Journal article RAE_uoa_type : Physics

PY - 2007/3/2

Y1 - 2007/3/2

N2 - The focusing of electric current by a single p-n junction in graphene is theoretically predicted. Precise focusing may be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values. This finding may be useful for the engineering of electronic lenses and focused beam splitters using gate-controlled n-p-n junctions in graphene-based transistors.

AB - The focusing of electric current by a single p-n junction in graphene is theoretically predicted. Precise focusing may be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values. This finding may be useful for the engineering of electronic lenses and focused beam splitters using gate-controlled n-p-n junctions in graphene-based transistors.

U2 - 10.1126/science.1138020

DO - 10.1126/science.1138020

M3 - Journal article

VL - 315

SP - 1252

EP - 1255

JO - Science

JF - Science

SN - 0036-8075

IS - 5816

ER -