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The morphology of GaSb/GaAs nanostructures grown by MBE

Research output: Contribution to conference - Without ISBN/ISSN Poster

Published
Publication date5/01/2012
<mark>Original language</mark>English
EventIOP One-Day Quantum Dot Meeting - Bristol, United Kingdom
Duration: 5/01/2012 → …

Conference

ConferenceIOP One-Day Quantum Dot Meeting
CountryUnited Kingdom
CityBristol
Period5/01/12 → …

Abstract

GaSb quantum dots embedded in GaAs-based device structures have exciting potential in a number of emerging electronic and optoelectronic applications. They are a type-II system whose band-structure provides strong confinement for heavy-holes and no confinement for electrons. Despite this type-II nature, excitons can still be bound to GaSb dots, with the Coulomb interaction dominating the physics of the electron’s binding.