Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 4/05/2007 |
|---|---|
| <mark>Journal</mark> | AIP Conference Proceedings |
| Volume | 893 |
| Number of pages | 2 |
| Pages (from-to) | 779-780 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
| Event | 28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: 24/07/2006 → 28/07/2006 |
| Conference | 28th International Conference on the Physics of Semiconductors, ICPS 2006 |
|---|---|
| Country/Territory | Austria |
| City | Vienna |
| Period | 24/07/06 → 28/07/06 |
We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k·p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots in a InGaAsP quaternary alloy matrix. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications.