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Theory and experiment of InAs/InP quantum dots: from calculations to laser emission

Research output: Contribution to journalJournal article

Published
  • C. Cornet
  • M. Hayne
  • A. Schliwa
  • F. Doré
  • C. Labbé
  • H. Folliot
  • J. Even
  • D. Bimberg
  • V. V. Moshchalkov
  • S. Loualiche
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<mark>Journal publication date</mark>4/05/2007
<mark>Journal</mark>AIP Conference Proceedings
Volume893
Number of pages2
Pages (from-to)779-780
Publication statusPublished
Original languageEnglish
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 24/07/200628/07/2006

Conference

Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period24/07/0628/07/06

Abstract

We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k·p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots in a InGaAsP quaternary alloy matrix. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications.