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Theory and experiment of InAs/InP quantum dots: from calculations to laser emission

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Theory and experiment of InAs/InP quantum dots : from calculations to laser emission. / Cornet, C.; Hayne, M.; Schliwa, A.; Doré, F.; Labbé, C.; Folliot, H.; Even, J.; Bimberg, D.; Moshchalkov, V. V.; Loualiche, S.

In: AIP Conference Proceedings, Vol. 893, 04.05.2007, p. 779-780.

Research output: Contribution to journalJournal article

Harvard

Cornet, C, Hayne, M, Schliwa, A, Doré, F, Labbé, C, Folliot, H, Even, J, Bimberg, D, Moshchalkov, VV & Loualiche, S 2007, 'Theory and experiment of InAs/InP quantum dots: from calculations to laser emission', AIP Conference Proceedings, vol. 893, pp. 779-780. https://doi.org/10.1063/1.2730122

APA

Cornet, C., Hayne, M., Schliwa, A., Doré, F., Labbé, C., Folliot, H., Even, J., Bimberg, D., Moshchalkov, V. V., & Loualiche, S. (2007). Theory and experiment of InAs/InP quantum dots: from calculations to laser emission. AIP Conference Proceedings, 893, 779-780. https://doi.org/10.1063/1.2730122

Vancouver

Cornet C, Hayne M, Schliwa A, Doré F, Labbé C, Folliot H et al. Theory and experiment of InAs/InP quantum dots: from calculations to laser emission. AIP Conference Proceedings. 2007 May 4;893:779-780. https://doi.org/10.1063/1.2730122

Author

Cornet, C. ; Hayne, M. ; Schliwa, A. ; Doré, F. ; Labbé, C. ; Folliot, H. ; Even, J. ; Bimberg, D. ; Moshchalkov, V. V. ; Loualiche, S. / Theory and experiment of InAs/InP quantum dots : from calculations to laser emission. In: AIP Conference Proceedings. 2007 ; Vol. 893. pp. 779-780.

Bibtex

@article{f4ec72c3601c4b7381b59c594a5e78a5,
title = "Theory and experiment of InAs/InP quantum dots: from calculations to laser emission",
abstract = "We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k·p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots in a InGaAsP quaternary alloy matrix. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications.",
keywords = "Eight-band kp, Lateral coupling, Magneto-photoluminescence, Quantum dots",
author = "C. Cornet and M. Hayne and A. Schliwa and F. Dor{\'e} and C. Labb{\'e} and H. Folliot and J. Even and D. Bimberg and Moshchalkov, {V. V.} and S. Loualiche",
year = "2007",
month = may
day = "4",
doi = "10.1063/1.2730122",
language = "English",
volume = "893",
pages = "779--780",
journal = "AIP Conference Proceedings",
issn = "0094-243X",
publisher = "American Institute of Physics Publising LLC",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",

}

RIS

TY - JOUR

T1 - Theory and experiment of InAs/InP quantum dots

T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006

AU - Cornet, C.

AU - Hayne, M.

AU - Schliwa, A.

AU - Doré, F.

AU - Labbé, C.

AU - Folliot, H.

AU - Even, J.

AU - Bimberg, D.

AU - Moshchalkov, V. V.

AU - Loualiche, S.

PY - 2007/5/4

Y1 - 2007/5/4

N2 - We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k·p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots in a InGaAsP quaternary alloy matrix. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications.

AB - We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k·p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots in a InGaAsP quaternary alloy matrix. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications.

KW - Eight-band kp

KW - Lateral coupling

KW - Magneto-photoluminescence

KW - Quantum dots

U2 - 10.1063/1.2730122

DO - 10.1063/1.2730122

M3 - Journal article

AN - SCOPUS:77958457629

VL - 893

SP - 779

EP - 780

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

SN - 0094-243X

Y2 - 24 July 2006 through 28 July 2006

ER -