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Transport of modulation-doped Al0.2Ga0.8Sb/GaSb heterojunctions

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Transport of modulation-doped Al0.2Ga0.8Sb/GaSb heterojunctions. / Hanks, Laura; Hayne, Manus; Marshall, Andrew Robert Julian; Ponomarenko, Leonid Alexandrovich.

In: Journal of Physics: Conference Series, Vol. 964, 012006, 02.03.2018.

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@article{b604874248e2488187d7834e803561da,
title = "Transport of modulation-doped Al0.2Ga0.8Sb/GaSb heterojunctions",
abstract = "Mobilities and carrier densities of modulation doped Al0.2Ga0.8Sb/GaSb heterostructures are presented for the first time. The structures studied were grown by molecular beam epitaxy and consisted of a single heterojunction with Te compensation doping to reduce the intrinsic p-type background. Hall measurements were performed from 30–300 K, giving p-type mobilities peaking at 3240 cm2/Vs, a considerable improvement over previous reported bulk mobilities for samples with compensation doping. Growth trials on bulk material have also been carried out to investigate the optimum growth conditions for future structures, with the aim of minimising the occurrence of natural growth defects in GaSb, which act as acceptors. Together these measurements lay the ground work for (magneto)transport studies of two-dimensional charge-carriers in AlxGa1-xSb/GaSb heterostructures, which has not been previously reported.",
author = "Laura Hanks and Manus Hayne and Marshall, {Andrew Robert Julian} and Ponomarenko, {Leonid Alexandrovich}",
year = "2018",
month = "3",
day = "2",
doi = "10.1088/1742-6596/964/1/012006",
language = "English",
volume = "964",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",

}

RIS

TY - JOUR

T1 - Transport of modulation-doped Al0.2Ga0.8Sb/GaSb heterojunctions

AU - Hanks, Laura

AU - Hayne, Manus

AU - Marshall, Andrew Robert Julian

AU - Ponomarenko, Leonid Alexandrovich

PY - 2018/3/2

Y1 - 2018/3/2

N2 - Mobilities and carrier densities of modulation doped Al0.2Ga0.8Sb/GaSb heterostructures are presented for the first time. The structures studied were grown by molecular beam epitaxy and consisted of a single heterojunction with Te compensation doping to reduce the intrinsic p-type background. Hall measurements were performed from 30–300 K, giving p-type mobilities peaking at 3240 cm2/Vs, a considerable improvement over previous reported bulk mobilities for samples with compensation doping. Growth trials on bulk material have also been carried out to investigate the optimum growth conditions for future structures, with the aim of minimising the occurrence of natural growth defects in GaSb, which act as acceptors. Together these measurements lay the ground work for (magneto)transport studies of two-dimensional charge-carriers in AlxGa1-xSb/GaSb heterostructures, which has not been previously reported.

AB - Mobilities and carrier densities of modulation doped Al0.2Ga0.8Sb/GaSb heterostructures are presented for the first time. The structures studied were grown by molecular beam epitaxy and consisted of a single heterojunction with Te compensation doping to reduce the intrinsic p-type background. Hall measurements were performed from 30–300 K, giving p-type mobilities peaking at 3240 cm2/Vs, a considerable improvement over previous reported bulk mobilities for samples with compensation doping. Growth trials on bulk material have also been carried out to investigate the optimum growth conditions for future structures, with the aim of minimising the occurrence of natural growth defects in GaSb, which act as acceptors. Together these measurements lay the ground work for (magneto)transport studies of two-dimensional charge-carriers in AlxGa1-xSb/GaSb heterostructures, which has not been previously reported.

U2 - 10.1088/1742-6596/964/1/012006

DO - 10.1088/1742-6596/964/1/012006

M3 - Journal article

VL - 964

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

M1 - 012006

ER -